US Patent Application 17660758. GATE SPACER STRUCTURE simplified abstract
Contents
GATE SPACER STRUCTURE
Organization Name
Inventor(s)
Fadoua Chafik of San Diego CA (US)
Xiaochen Zhang of Carlsbad CA (US)
GATE SPACER STRUCTURE - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17660758 Titled 'GATE SPACER STRUCTURE'
Simplified Explanation
The abstract describes a method for creating a semiconductor device that includes different types of transistors. These transistors have different gate spacer structures, with the third gate spacer structure being thinner than the first gate spacer structure. The semiconductor device includes static random-access memory (SRAM) transistors, logic nominal transistors, and logic gate-biased transistors, all of which have the same contacted poly pitch (CPP).
Original Abstract Submitted
Disclosed are apparatuses and techniques for fabricating an apparatus including a semiconductor device. The semiconductor device may include one or more static random-access memory (SRAM) transistors, each including a first gate spacer structure; one or more logic nominal transistors, each including a second gate spacer structure; and one or more logic gate-biased transistors, each including a third gate spacer structure, where the third gate spacer structure is thinner than the first gate spacer structure and where the one or more SRAM transistors, the one or more logic nominal transistors, and the one or more logic gate-biased transistors each have a same contacted poly pitch (CPP).
