US Patent Application 17660241. SEMICONDUCTOR GATE AND CONTACT FORMATION simplified abstract
Contents
SEMICONDUCTOR GATE AND CONTACT FORMATION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsiang-Ju Liao of Hsinchu (TW)
Cheng-Lung Hung of Hsinchu City (TW)
Chi On Chui of Hsinchu City (TW)
Jo-Chun Hung of Hsinchu City (TW)
Chih-Wei Lee of New Taipei City (TW)
SEMICONDUCTOR GATE AND CONTACT FORMATION - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17660241 Titled 'SEMICONDUCTOR GATE AND CONTACT FORMATION'
Simplified Explanation
The abstract describes a method of annealing ruthenium in a metal gate or middle end of line structure to reduce or eliminate seams. This annealing process improves the electrical performance by decreasing the resistivity of the structure. It also helps in achieving a more even deposition profile, leading to a uniform gate height after etching. This increases the number of functional metal gates and improves the yield during the production of electronic devices.
Original Abstract Submitted
Ruthenium of a metal gate (MG) and/or a middle end of line (MEOL) structure is annealed to reduce, or even eliminate, seams after the ruthenium is deposited. Because the annealing reduces (or removes) seams in deposited ruthenium, electrical performance is increased because resistivity of the MG and/or the MEOL structure is decreased. Additionally, for MGs, the annealing generates a more even deposition profile, which results in a timed etching process producing a uniform gate height. As a result, more of the MGs will be functional after etching, which increases yield during production of the electronic device.
