US Patent Application 17660201. Bank-Level Self-Refresh simplified abstract

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Bank-Level Self-Refresh

Organization Name

Micron Technology, Inc.


Inventor(s)

John Christopher Sancon of Boise ID (US)


Yang Lu of Boise ID (US)


Kang-Yong Kim of Boise ID (US)


Mark Kalei Hadrick of Boise ID (US)


Hyun Yoo Lee of Boise ID (US)


Bank-Level Self-Refresh - A simplified explanation of the abstract

  • This abstract for appeared for US patent application number 17660201 Titled 'Bank-Level Self-Refresh'

Simplified Explanation

The abstract describes a method and apparatus for implementing a self-refresh operation in a memory device. This self-refresh operation is performed on a specific set of banks within the memory device, rather than all of the banks. By doing this, the peak current in the power distribution network of the memory device is limited, which reduces the complexity and cost of the power distribution network. This bank-level self-refresh can be used in memory expansion environments and can be implemented with different types of refresh operations.


Original Abstract Submitted

Described apparatuses and methods relate to a bank-level self-refresh for a memory system. A memory device can include a controller with logic that implements self-refresh operations in the memory device. The logic may perform self-refresh operations on a set of banks of the memory device that is less than all banks within the memory device. The set of banks of the memory device may be determined such that the peak current in a power distribution network of the memory device is bounded when the self-refresh operation is performed. Accordingly, bank-level self-refresh can reduce a cost of the memory device of a memory system by enabling use of a less complicated power distribution network. The bank-level self-refresh may also be implemented with different types of refresh operations. Amongst other scenarios, bank-level self-refresh can be deployed in memory-expansion environments.