US Patent Application 17660199. Bank-Level Self-Refresh simplified abstract
Contents
Bank-Level Self-Refresh
Organization Name
Inventor(s)
John Christopher Sancon of Boise ID (US)
Kang-Yong Kim of Boise ID (US)
Mark Kalei Hadrick of Boise ID (US)
Bank-Level Self-Refresh - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 17660199 Titled 'Bank-Level Self-Refresh'
Simplified Explanation
The abstract describes a method and apparatus for implementing a self-refresh operation in a memory device. This self-refresh operation is performed on a specific set of banks within the memory device, rather than on all banks. By selectively choosing which banks to perform the self-refresh operation on, the peak current in the power distribution network of the memory device can be controlled. This allows for the use of a less complex power distribution network, reducing the cost of the memory device. The bank-level self-refresh can also be used in memory-expansion environments and can be implemented with different types of refresh operations.
Original Abstract Submitted
Described apparatuses and methods relate to a bank-level self-refresh for a memory system. A memory device can include logic that implements self-refresh operations in the memory device. The logic may perform self-refresh operations on a set of banks of the memory device that is less than all banks within the memory device. The set of banks of the memory device may be determined such that the peak current in a power distribution network of the memory device is bounded when the self-refresh operation is performed. Accordingly, bank-level self-refresh can reduce a cost of the memory device of a memory system by enabling use of a less complicated power distribution network. The bank-level self-refresh may also be implemented with different types of refresh operations. Amongst other scenarios, bank-level self-refresh can be deployed in memory-expansion environments.
