US Patent Application 17630113. MEMORY MANAGEMENT PROCEDURES FOR WRITE BOOST MODE simplified abstract

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MEMORY MANAGEMENT PROCEDURES FOR WRITE BOOST MODE

Organization Name

Micron Technology, Inc.


Inventor(s)

Xing Wang of Shanghai (CN)

Zhen Gu of Shanghai (CN)

Xu Zhang of Shanghai (CN)

Liping Xu of Shanghai (CN)

MEMORY MANAGEMENT PROCEDURES FOR WRITE BOOST MODE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17630113 titled 'MEMORY MANAGEMENT PROCEDURES FOR WRITE BOOST MODE

Simplified Explanation

The patent application describes methods, systems, and devices for memory management procedures in a memory system's write boost mode.

  • The memory system receives a command to write data.
  • The data is initially written to a first location in the memory system using a first mode that stores one bit per memory cell.
  • Based on certain parameters meeting specific thresholds, a first portion of the data is selected to be rewritten using a second mode that stores two or more bits per memory cell.
  • The selected first portion of the data is then written to a second location in the memory system using the second mode.
  • The remaining second portion of the data is maintained at the original first location in the memory system.


Original Abstract Submitted

Methods, systems, and devices for memory management procedures for write boost mode are described. A memory system may receive a command to write data. The memory system may write the data to a first location of the memory system using a first mode for storing one bit per memory cell based on receiving the command. The memory system may select a first portion of the data to rewrite to the memory system using a second mode for storing two or more bits per memory cell based on one or more parameters satisfying one or more thresholds. The memory system may write the first portion of the data to a second location of the memory system using the second mode based on selecting the first portion of the data. The memory system may maintain a second portion of the data at the first location of the memory system.