Texas instruments incorporated (20240113156). THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE PATTERN (SADP) TECHNIQUE simplified abstract
Contents
- 1 THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE PATTERN (SADP) TECHNIQUE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE PATTERN (SADP) TECHNIQUE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE PATTERN (SADP) TECHNIQUE
Organization Name
texas instruments incorporated
Inventor(s)
Scott William Jessen of Allen TX (US)
Steven Lee Prins of Fairview TX (US)
Sameer Prakash Pendharkar of Allen TX (US)
Gregory Boyd Shinn of Dallas TX (US)
THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE PATTERN (SADP) TECHNIQUE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113156 titled 'THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE PATTERN (SADP) TECHNIQUE
Simplified Explanation
The abstract of the patent application describes a passive circuit component with low line edge roughness achieved through a self-aligned double patterning etch process using a tri-layer process flow.
- The passive circuit component includes an edge with low line edge roughness (LER).
- The method for manufacturing the passive circuit component involves a self-aligned double patterning (SADP) etch process using a tri-layer process flow.
- The tri-layer process flow consists of an underlayer, hard mask, and photoresist.
- The passive circuit component made by this method improves mismatch between like components due to the low LER.
Potential Applications
The technology can be applied in the manufacturing of high-frequency passive components for electronic devices, such as filters, antennas, and impedance matching networks.
Problems Solved
1. Improved mismatch between like components due to low line edge roughness. 2. Enhanced performance and reliability of passive circuit components.
Benefits
1. Increased precision and accuracy in manufacturing passive circuit components. 2. Improved signal integrity and overall performance of electronic devices. 3. Cost-effective production process with high yield rates.
Potential Commercial Applications
Optimizing passive circuit components for use in telecommunications, aerospace, automotive, and consumer electronics industries.
Possible Prior Art
There may be prior art related to the use of self-aligned double patterning etch processes in semiconductor manufacturing to improve component performance and reliability.
Unanswered Questions
How does the low line edge roughness impact the overall performance of the passive circuit component?
The low line edge roughness can lead to improved signal integrity and reduced mismatch between like components, but the specific effects on performance need further clarification through testing and analysis.
What are the limitations of the self-aligned double patterning etch process in manufacturing passive circuit components?
While the SADP etch process offers benefits such as low line edge roughness, there may be challenges related to process complexity, cost, and scalability that need to be addressed for widespread adoption in the industry.
Original Abstract Submitted
a passive circuit component includes an edge having a low line edge roughness (ler). a method for manufacturing the passive circuit component includes a self-aligned double patterning (sadp) etch process using a tri-layer process flow. the tri-layer process flow includes use of an underlayer, hard mask, and photoresist. the passive circuit component made by this method achieves improved mismatch between like components due to the low ler.
