Texas instruments incorporated (20240113096). DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE simplified abstract
Contents
- 1 DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE
Organization Name
texas instruments incorporated
Inventor(s)
Jeffrey Alan West of Dallas TX (US)
Yoshihiro Takei of USHIKU (JP)
Mitsuhiro Sugimoto of TSUKUBA (JP)
DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113096 titled 'DIELECTRIC FILMS OVER ELECTRODE FOR HIGH VOLTAGE PERFORMANCE
Simplified Explanation
The microelectronic device described in the abstract includes a lower isolation element, an upper isolation element, and an isolation dielectric layer stack. Additionally, there is a lower field reduction layer over the lower isolation element, under the isolation dielectric layer stack. The lower field reduction layer consists of a first dielectric layer and a second dielectric layer, with the first dielectric layer having a higher dielectric constant than the second dielectric layer. The dielectric constant of the second dielectric layer is greater than that of the isolation dielectric layer stack adjacent to the lower field reduction layer.
- Lower isolation element and upper isolation element separated by an isolation dielectric layer stack
- Lower field reduction layer with a first dielectric layer and a second dielectric layer
- Dielectric constants of the layers vary, with the first dielectric layer having the highest constant
Potential Applications
The technology described in this patent application could be applied in the manufacturing of microelectronic devices, such as integrated circuits, to improve isolation and reduce field effects.
Problems Solved
This technology helps in reducing field effects in microelectronic devices, which can improve their performance and reliability.
Benefits
The use of lower field reduction layers can enhance the overall functionality and efficiency of microelectronic devices by minimizing interference and improving signal integrity.
Potential Commercial Applications
- Improved performance and reliability of integrated circuits
- Enhanced signal integrity in microelectronic devices
Possible Prior Art
One possible prior art could be the use of field reduction layers in microelectronic devices to improve isolation and reduce interference.
What are the specific materials used in the first and second dielectric layers of the lower field reduction layer?
The specific materials used in the first and second dielectric layers are not mentioned in the abstract.
How does the dielectric constant affect the performance of the microelectronic device?
The dielectric constant of the layers impacts the capacitance and electrical properties of the device, which can influence its overall performance and efficiency.
Original Abstract Submitted
a microelectronic device includes a lower isolation element and an upper isolation element, separated by an isolation dielectric layer stack. the microelectronic device includes a lower field reduction layer over the lower isolation element, under the isolation dielectric layer stack. the lower field reduction layer includes a first dielectric layer adjacent to the isolation dielectric layer stack, and a second dielectric layer over the first dielectric layer. a dielectric constant of the first dielectric layer is greater than a dielectric constant of the second dielectric layer. the dielectric constant of the second dielectric layer is greater than a dielectric constant of the isolation dielectric layer stack adjacent to the lower field reduction layer. methods of forming example microelectronic device having lower field reduction layers are disclosed.
