Texas instruments incorporated (20240113063). RADIATOR LAYERS FOR ULTRASONIC TRANSDUCERS simplified abstract

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RADIATOR LAYERS FOR ULTRASONIC TRANSDUCERS

Organization Name

texas instruments incorporated

Inventor(s)

Udit Rawat of West Lafayette IN (US)

Bichoy Bahr of Allen TX (US)

Swaminathan Sankaran of Allen TX (US)

Baher S. Haroun of Allen TX (US)

RADIATOR LAYERS FOR ULTRASONIC TRANSDUCERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113063 titled 'RADIATOR LAYERS FOR ULTRASONIC TRANSDUCERS

Simplified Explanation

The semiconductor die in this patent application comprises a semiconductor substrate with a radiator layer on the surface, including a metal member with two portions at different distances from the surface, and a piezoelectric layer between the metal members and the substrate.

  • The semiconductor die includes a semiconductor substrate with a surface divided into first and second portions, and a radiator layer made of a metal member with two portions at different distances from the surface.
  • The radiator layer also contains first and second electrodes, as well as a piezoelectric layer between the metal members and the substrate.

Potential Applications

This technology could be applied in:

  • Semiconductor devices
  • Electronic components
  • Thermal management systems

Problems Solved

This technology helps in:

  • Improving heat dissipation in semiconductor devices
  • Enhancing the performance and reliability of electronic components
  • Providing efficient thermal management solutions

Benefits

The benefits of this technology include:

  • Increased efficiency of semiconductor devices
  • Enhanced reliability of electronic components
  • Improved thermal performance

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Automotive industry
  • Aerospace sector

Possible Prior Art

One possible prior art could be:

  • Existing semiconductor die designs with radiator layers and metal members.

Unanswered Questions

How does this technology compare to traditional cooling methods in semiconductor devices?

This technology offers improved heat dissipation compared to traditional cooling methods by utilizing the piezoelectric layer for enhanced thermal management.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing?

One potential challenge could be the cost of production and integration of the piezoelectric layer in semiconductor devices, which may require additional manufacturing processes and materials.


Original Abstract Submitted

in examples, a semiconductor die comprises a semiconductor substrate having a surface, the surface having first and second surface portions, and a radiator layer on the surface. the radiator layer comprises a metal member having a first metal member portion above the first surface portion and a second metal member portion above the second surface portion, a first distance between the first metal member portion and the first surface portion, and a second distance between the second metal member portion and the second surface portion, the first distance less than the second distance. the radiator layer includes first and second electrodes. the radiator layer includes a piezoelectric layer extending along a length of the radiator layer and on each of the first and second electrodes, the piezoelectric layer between the first and second metal members and the semiconductor substrate.