Texas instruments incorporated (20240112858). MICRO DEVICE WITH SHEAR PAD simplified abstract

MICRO DEVICE WITH SHEAR PAD

Organization Name

texas instruments incorporated

Inventor(s)

Jeffrey A West of Dallas TX (US)

MICRO DEVICE WITH SHEAR PAD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240112858 titled 'MICRO DEVICE WITH SHEAR PAD

Simplified Explanation

The example method described in the abstract involves a process for etching multiple dielectric layers in a semiconductor device while exposing a bond pad. Here is a simplified explanation of the abstract:

• Form and pattern an etch assist layer on a first dielectric layer, avoiding placement over a bond pad.
• Form and pattern a first photoresist layer on a second patterned conductive layer on the first dielectric, also avoiding placement over a bond pad.
• Etch the second dielectric layer to a specific depth range.
• Etch the first dielectric layer and second dielectric layer to a specific depth range using a second photoresist layer.
• Expose the first bond pad by etching the first dielectric layer using a patterned third photoresist layer, leaving a specific thickness of dielectric layer adjacent to the bond pad.

1. 1. 1. Potential Applications

- Semiconductor manufacturing - Integrated circuit fabrication

1. 1. 1. Problems Solved

- Precise etching of multiple dielectric layers - Exposing bond pads without damaging surrounding layers

1. 1. 1. Benefits

- Improved accuracy in etching processes - Enhanced reliability of semiconductor devices

1. 1. 1. Potential Commercial Applications
         1. Precision Etching Process for Semiconductor Devices

1. 1. 1. Possible Prior Art

- Techniques for etching dielectric layers in semiconductor devices - Methods for exposing bond pads during semiconductor fabrication processes

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this method compare to existing techniques for etching multiple dielectric layers in semiconductor devices?

This article does not provide a direct comparison to existing techniques, leaving room for further analysis and evaluation of the innovation's advantages over current methods.

1. 1. 1. 1. What impact could this method have on the overall efficiency and cost-effectiveness of semiconductor manufacturing processes?

The article does not delve into the potential cost and efficiency implications of implementing this method in semiconductor manufacturing, warranting further investigation into its economic benefits.

Original Abstract Submitted

an example method includes forming and patterning an etch assist layer on a first dielectric layer such that the etch assist layer is not over a first bond pad; forming and patterning a first photoresist layer on a second patterned conductive layer on the first dielectric, wherein the first photoresist layer is not over the first bond pad and etching the second dielectric layer to a depth of 5 to 15% of a thickness of the first dielectric layer and the second dielectric layer; etching the first dielectric layer and second dielectric layer using a second photoresist layer to a depth of 20 to 25%; and exposing the first bond pad by etching the first dielectric layer using a patterned third photoresist layer, such that an area of the dielectric layer exposed by the third opening adjacent to the bond pad is between 3-5 �m thick.