Texas instruments incorporated (20240113094). GALVANIC ISOLATION DEVICE simplified abstract

GALVANIC ISOLATION DEVICE

Organization Name

texas instruments incorporated

Inventor(s)

Jeffrey Alan West of Plano TX (US)

Sreeram N. S. of Bangalore (IN)

Kashyap Barot of Bangalore (IN)

Thomas Dyer Bonifield of Dallas TX (US)

Byron Lovell Williams of Plano TX (US)

Elizabeth Costner Stewart of Dallas TX (US)

GALVANIC ISOLATION DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113094 titled 'GALVANIC ISOLATION DEVICE

Simplified Explanation

The microelectronic device described in the patent application includes a galvanic isolation device on a silicon substrate and a semiconductor device on a semiconductor substrate. The galvanic isolation device consists of a lower isolation element, an upper isolation element, and a dielectric plateau made of inorganic dielectric material separating the two elements. The device also includes lower bond pads connected to the lower isolation element, upper bond pads connected to the upper isolation element, and device bond pads coupled to the active component of the semiconductor device.

• The microelectronic device features galvanic isolation technology on a silicon substrate.
• The galvanic isolation device includes lower and upper isolation elements separated by a dielectric plateau.
• The device includes bond pads connected to the isolation elements and the active component of the semiconductor device.
• The device has first electrical connections to the lower bond pads and second electrical connections to the upper bond pads.

Potential Applications

The technology described in this patent application could be applied in:

• Power electronics
• Communication systems
• Industrial control systems

Problems Solved

This technology helps in:

• Preventing electrical interference
• Enhancing signal integrity
• Improving overall system reliability

Benefits

The benefits of this technology include:

• Increased performance
• Enhanced safety
• Greater design flexibility

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Automotive industry
• Aerospace sector
• Telecommunications industry

Possible Prior Art

One possible prior art for this technology could be:

• Isolation devices using traditional methods on silicon substrates

Unanswered Questions

How does this technology compare to existing galvanic isolation devices?

This article does not provide a direct comparison with existing galvanic isolation devices, leaving the reader to wonder about the specific advantages of this new technology over current solutions.

What are the specific manufacturing processes involved in creating this microelectronic device?

The article does not delve into the detailed manufacturing processes used to fabricate this device, leaving the reader curious about the intricacies of production.

Original Abstract Submitted

a microelectronic device includes a galvanic isolation device on a silicon substrate and a semiconductor device on a semiconductor substrate. the galvanic isolation device includes a lower isolation element over the silicon substrate and an upper isolation element above the lower isolation element, separated by a dielectric plateau that comprises inorganic dielectric material extending from the lower isolation element to the upper isolation element. the galvanic isolation device includes lower bond pads connected to the lower isolation element adjacent to the dielectric plateau, and upper bond pads over the dielectric plateau, connected to the upper isolation element. the semiconductor device includes an active component, and device bond pads coupled to the active component. the microelectronic device includes first electrical connections to the lower bond pads and second electrical connections to the upper bond pads. the first electrical connections or the second electrical connections are connected to the device bond pads.