Taiwan semiconductor manufacturing company, ltd. (20240136184). METHOD FOR FORMING AND USING MASK simplified abstract
Contents
- 1 METHOD FOR FORMING AND USING MASK
METHOD FOR FORMING AND USING MASK
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
METHOD FOR FORMING AND USING MASK - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136184 titled 'METHOD FOR FORMING AND USING MASK
Simplified Explanation
The method described in the abstract involves forming a semiconductor device by patterning layers of photoresist and oxide to create a mask for patterning a target layer.
- Formation of photoresist layer over a mask layer
- Patterning of the photoresist layer
- Formation of an oxide layer on exposed surfaces of the patterned photoresist layer
- Patterning of the mask layer using the patterned photoresist layer as a mask
- Patterning of a target layer using the patterned mask layer
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory devices.
Problems Solved
This method helps in achieving precise patterning of semiconductor layers, which is crucial for the functionality and performance of semiconductor devices.
Benefits
The method allows for the creation of intricate patterns on semiconductor layers, enabling the production of advanced and high-performance semiconductor devices.
Potential Commercial Applications
The technology can be utilized by semiconductor manufacturers to enhance the quality and efficiency of their production processes, leading to the development of cutting-edge semiconductor products.
Possible Prior Art
Prior art in semiconductor manufacturing processes may include methods for patterning layers using different materials and techniques, such as photolithography and etching processes.
Unanswered Questions
How does this method compare to traditional semiconductor patterning techniques?
This article does not provide a direct comparison between this method and traditional semiconductor patterning techniques.
What are the specific semiconductor devices that can benefit the most from this technology?
The article does not specify the particular semiconductor devices that can benefit the most from the described method.
Original Abstract Submitted
a method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. the mask layer is patterned using the patterned photoresist layer as a mask. a target layer is patterned using the patterned mask layer a
