Taiwan semiconductor manufacturing company, ltd. (20240120409). METHOD FOR NON-RESIST NANOLITHOGRAPHY simplified abstract
Contents
- 1 METHOD FOR NON-RESIST NANOLITHOGRAPHY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR NON-RESIST NANOLITHOGRAPHY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR NON-RESIST NANOLITHOGRAPHY
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Miin-Jang Chen of Taipei City (TW)
Kuen-Yu Tsai of Taipei City (TW)
METHOD FOR NON-RESIST NANOLITHOGRAPHY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120409 titled 'METHOD FOR NON-RESIST NANOLITHOGRAPHY
Simplified Explanation
The abstract describes a method for forming a semiconductor device by creating a combined patterned mask on a substrate, exposing certain portions of the substrate, and forming trenches in those exposed areas.
- Formation of first patterned mask on substrate
- Formation of second patterned mask within opening of first mask
- Creation of combined patterned mask with second openings
- Formation of trenches in exposed portions of substrate
Potential Applications
This technology could be applied in the manufacturing of various semiconductor devices such as integrated circuits, memory chips, and microprocessors.
Problems Solved
This method helps in achieving precise patterning and etching of semiconductor materials, leading to improved device performance and reliability.
Benefits
- Enhanced control over semiconductor device fabrication
- Increased efficiency in production processes
- Higher quality and consistency in device performance
Potential Commercial Applications
- Semiconductor manufacturing industry
- Electronics industry
- Research and development organizations
Possible Prior Art
One possible prior art could be the use of photolithography and etching techniques in semiconductor device fabrication processes.
What are the specific materials used in this method?
The specific materials used in this method are not mentioned in the abstract. It would be helpful to know the types of masks and substrates utilized for semiconductor device fabrication.
How does this method compare to existing semiconductor fabrication techniques?
The abstract does not provide a direct comparison to existing semiconductor fabrication techniques. It would be beneficial to understand the advantages or limitations of this method compared to traditional methods such as photolithography.
Original Abstract Submitted
a method for forming a semiconductor device is provided. a first patterned mask is formed on the substrate, the first patterned mask having a first opening therein. a second patterned mask is formed on the substrate in the first opening, the first patterned mask and the second patterned mask forming a combined patterned mask. the combined patterned mask is formed having one or more second openings, wherein one or more unmasked portions of the substrate are exposed. trenches that correspond to the one or more unmasked portions of the substrate are formed in the substrate in the one or more second openings.
