Taiwan semiconductor manufacturing company, ltd. (20240120338). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Hao Chang of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120338 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The semiconductor device structure described in the abstract features dielectric walls that physically and electrically isolate different regions within the device. A contact is formed to connect these regions, extending over the dielectric walls. The first dielectric wall tapers towards its tip, creating a gradually decreasing width.
- Dielectric walls isolate different regions within the semiconductor device.
- Contact is formed to connect these regions, extending over the dielectric walls.
- First dielectric wall tapers towards its tip, with a gradually decreasing width.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and memory devices.
Problems Solved
1. Improved isolation between different regions within the semiconductor device. 2. Enhanced electrical connectivity between the source/drain regions.
Benefits
1. Increased efficiency and performance of semiconductor devices. 2. Enhanced reliability and durability of the device structure.
Potential Commercial Applications
Optimizing Semiconductor Device Structure for Enhanced Performance
Possible Prior Art
Prior art may include similar semiconductor device structures with dielectric walls for isolation and connectivity, but the specific design of the tapered dielectric wall towards the tip may be a novel feature in this innovation.
Unanswered Questions
How does the tapering of the dielectric wall impact the overall performance of the semiconductor device?
The tapering of the dielectric wall may affect the electrical properties and efficiency of the device, but further testing and analysis would be needed to fully understand its impact.
Are there any limitations or drawbacks to the design of the semiconductor device structure described in the patent application?
Potential limitations or drawbacks, such as manufacturing complexity or cost implications, should be considered to evaluate the practicality of implementing this technology in commercial applications.
Original Abstract Submitted
a semiconductor device structure is provided. the semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. a second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. a contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. the first electric wall has a gradually decreasing width wtowards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.
