Taiwan semiconductor manufacturing company, ltd. (20240120314). ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING simplified abstract
Contents
- 1 ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Huicheng Chang of Tainan City (TW)
Jyh-Cherng Sheu of Hsinchu (TW)
Chen-Fong Tsai of Hsinchu (TW)
Yun Chen Teng of New Taipei City (TW)
ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120314 titled 'ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING
Simplified Explanation
The patent application describes a method of ion implantation combined with annealing using a pulsed laser or a furnace for cutting substrate in forming semiconductor devices.
- The method includes forming a transistor structure on a semiconductor substrate, implanting ions to form an implantation region, bonding a carrier substrate, and applying an annealing process to separate the implantation region from the substrate.
- The method also involves forming interconnect structures on the front and back sides of the transistor structure.
Potential Applications
This technology can be applied in the manufacturing of semiconductor devices, specifically in the formation of transistor structures on substrates.
Problems Solved
This technology solves the problem of efficiently separating implantation regions from semiconductor substrates during the manufacturing process.
Benefits
The benefits of this technology include improved efficiency in forming semiconductor devices, as well as the ability to create precise implantation regions on substrates.
Potential Commercial Applications
This technology can be utilized in the semiconductor industry for the production of advanced semiconductor devices with enhanced performance.
Possible Prior Art
One possible prior art could be the use of traditional ion implantation methods without the combination of annealing using a pulsed laser or a furnace for cutting substrates.
Unanswered Questions
1. What specific types of semiconductor devices can benefit the most from this method? 2. How does the cost of implementing this technology compare to traditional methods of semiconductor device manufacturing?
Original Abstract Submitted
methods of ion implantation combined with annealing using a pulsed laser or a furnace for cutting substrate in forming semiconductor devices and semiconductor devices including the same are disclosed. in an embodiment, a method includes forming a transistor structure of a device on a first semiconductor substrate; forming a front-side interconnect structure over a front side of the transistor structure; bonding a carrier substrate to the front-side interconnect structure; implanting ions into the first semiconductor substrate to form an implantation region of the first semiconductor substrate; and removing the first semiconductor substrate. removing the first semiconductor substrate includes applying an annealing process to separate the implantation region from a remainder region of the first semiconductor substrate. the method also includes forming a back-side interconnect structure over a back side of the transistor structure.
