Taiwan semiconductor manufacturing company, ltd. (20240120272). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Wei-Hao Liao of Taichung (TW)

Hsi-Wen Tien of Hsinchu (TW)

Chih Wei Lu of Hsinchu (TW)

Yung-Hsu Wu of Taipei (TW)

Cherng-Shiaw Tsai of New Taipei (TW)

Chia-Wei Su of Taoyuan (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240120272 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Simplified Explanation

The present disclosure describes a method for forming a semiconductor device structure, involving the creation of conductive features within interlayer dielectrics, the addition of an etch stop layer, the formation of a second interlayer dielectric, the creation of openings to expose the conductive features, elongating the shape of the openings through etching processes, and filling the openings with a conductive material.

• Conductive features are formed in a first interlayer dielectric.
• An etch stop layer is added on top of the first interlayer dielectric.
• A second interlayer dielectric is formed over the etch stop layer.
• Openings are created through the second interlayer dielectric and etch stop layer to expose the conductive features.
• The shape of the openings is elongated through a second etch process in a different process chamber.
• The openings are filled with a conductive material.

Potential Applications

This technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This method helps in improving the conductivity and performance of semiconductor devices by ensuring proper connection and contact between different layers and components.

Benefits

- Enhanced conductivity within the semiconductor device structure. - Improved reliability and efficiency of the device. - Better integration of multiple components in a compact space.

Potential Commercial Applications

The technology can be utilized in the production of advanced electronic devices for consumer electronics, telecommunications, automotive systems, and industrial applications.

Possible Prior Art

Prior methods for forming semiconductor device structures may have involved different techniques for creating and filling openings to expose and connect conductive features within the device. Further research is needed to identify specific prior art related to this particular method.

How does this method compare to traditional techniques for forming semiconductor device structures?

This article does not provide a direct comparison to traditional methods or highlight the specific advantages of this new approach over existing techniques.

What are the potential challenges or limitations of implementing this method in semiconductor manufacturing processes?

The article does not address any potential drawbacks or obstacles that may arise when implementing this method in practical semiconductor manufacturing environments.

Original Abstract Submitted

embodiments of the present disclosure relates to a method for forming a semiconductor device structure. the method includes including forming one or more conductive features in a first interlayer dielectric (ild), forming an etch stop layer on the first ild, forming a second ild over the etch stop layer, forming one or more openings through the second ild and the etch stop layer to expose a top surface of the one or more first conductive features, wherein the one or more openings are formed by a first etch process in a first process chamber, exposing the one or more openings to a second etch process in a second process chamber so that the shape of the or more openings is elongated, and filling the one or more openings with a conductive material.