Taiwan semiconductor manufacturing company, ltd. (20240120257). Layer-By-Layer Formation Of Through-Substrate Via simplified abstract
Contents
- 1 Layer-By-Layer Formation Of Through-Substrate Via
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Layer-By-Layer Formation Of Through-Substrate Via - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Layer-By-Layer Formation Of Through-Substrate Via
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tsung-Chieh Hsiao of Changhua County (TW)
Liang-Wei Wang of Hsinchu City (TW)
Layer-By-Layer Formation Of Through-Substrate Via - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120257 titled 'Layer-By-Layer Formation Of Through-Substrate Via
Simplified Explanation
The integrated circuit (IC) device described in the patent application includes a multi-layer interconnect structure with a through-substrate via (TSV) extending vertically through the substrate. The TSV is electrically coupled to the metal layers of the interconnect structure, allowing for improved connectivity and performance of the IC device.
- The IC device includes a substrate with a multi-layer interconnect structure on one side.
- The interconnect structure consists of multiple metal layers.
- A portion of the TSV is integrated into the metal layers of the interconnect structure.
- The TSV extends vertically through the substrate to the opposite side.
- The TSV is electrically connected to the metal layers of the interconnect structure.
Potential Applications
The technology described in this patent application could be applied in various fields such as:
- Semiconductor manufacturing
- Electronics industry
- Communication systems
Problems Solved
This technology addresses the following issues:
- Improved connectivity in IC devices
- Enhanced performance of integrated circuits
- Efficient vertical integration of components
Benefits
The benefits of this technology include:
- Higher efficiency in data transmission
- Increased reliability of IC devices
- Enhanced functionality in electronic systems
Potential Commercial Applications
The technology has potential applications in:
- Mobile devices
- Computer hardware
- Networking equipment
Possible Prior Art
Prior art in the field of semiconductor manufacturing and IC design may include:
- Existing methods of through-substrate via integration
- Previous patents related to interconnect structures in IC devices
Unanswered Questions
How does this technology compare to existing TSV integration methods?
The article does not provide a direct comparison to other TSV integration techniques in terms of performance, cost, or scalability.
What are the specific challenges in implementing this technology in mass production?
The article does not address the potential challenges or limitations of scaling up this technology for mass production in semiconductor manufacturing.
Original Abstract Submitted
an integrated circuit (ic) device includes a substrate. the ic device includes a multi-layer interconnect structure disposed over a first side of the substrate. the multi-layer interconnect structure includes a plurality of metal layers. the ic device includes a first portion of a through-substrate via (tsv) disposed over the first side of the substrate. the first portion of the tsv includes a plurality of conductive components belonging to the plurality of metal layers of the multi-layer interconnect structure. the ic device includes a second portion of the tsv that extends vertically through the substrate from the first side to a second side opposite the first side. the second portion of the tsv is electrically coupled to the first portion of the tsv.
