Taiwan semiconductor manufacturing company, ltd. (20240120200). METHOD AND STRUCTURE OF CUT END WITH SELF-ALIGNED DOUBLE PATTERNING simplified abstract
Contents
- 1 METHOD AND STRUCTURE OF CUT END WITH SELF-ALIGNED DOUBLE PATTERNING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD AND STRUCTURE OF CUT END WITH SELF-ALIGNED DOUBLE PATTERNING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD AND STRUCTURE OF CUT END WITH SELF-ALIGNED DOUBLE PATTERNING
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsi-Wen Tien of Hsinchu County (TW)
Chih Wei Lu of Hsinchu City (TW)
Chung-Ju Lee of Hsinchu City (TW)
METHOD AND STRUCTURE OF CUT END WITH SELF-ALIGNED DOUBLE PATTERNING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120200 titled 'METHOD AND STRUCTURE OF CUT END WITH SELF-ALIGNED DOUBLE PATTERNING
Simplified Explanation
The abstract describes a method of forming a semiconductor device involving the use of multiple hard masks and spacers.
- The method involves receiving a structure with a substrate and a first hard mask with at least two separate portions.
- Spacers are formed along the sidewalls of the portions of the first hard mask with a space between them.
- A second hard mask is then formed in the space between the spacers.
- First and second cuts are made in the respective hard masks.
- Finally, a cut hard mask is deposited in the first and second cuts.
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This method helps in achieving precise patterning and etching of semiconductor materials, leading to improved device performance and reliability.
Benefits
The use of multiple hard masks and spacers allows for finer control over the fabrication process, resulting in higher yields and lower defect rates in semiconductor production.
Potential Commercial Applications
This innovative method can be utilized by semiconductor manufacturers to enhance the quality and efficiency of their production processes, leading to the development of more advanced and reliable electronic devices.
Possible Prior Art
One possible prior art in semiconductor manufacturing could be the use of single hard masks for patterning and etching processes. However, the use of multiple hard masks and spacers as described in this patent application represents a novel approach to semiconductor device fabrication.
Unanswered Questions
How does this method compare to existing semiconductor fabrication techniques?
This article does not provide a direct comparison with traditional semiconductor fabrication methods, leaving the reader to wonder about the specific advantages and limitations of this new approach.
What are the potential challenges or limitations of implementing this method in large-scale semiconductor production?
The article does not address the scalability or practicality of this method for mass production, leaving open questions about its feasibility in industrial settings.
Original Abstract Submitted
semiconductor device and the manufacturing method thereof are disclosed herein. an exemplary method of forming a semiconductor device comprises receiving a structure including a substrate and a first hard mask over the substrate, the first hard mask having at least two separate portions; forming spacers along sidewalls of the at least two portions of the first hard mask with a space between the spacers; forming a second hard mask in the space; forming a first cut in the at least two portions of the first hard mask; forming a second cut in the second hard mask; and depositing a cut hard mask in the first cut and the second cut.
