Taiwan semiconductor manufacturing company, ltd. (20240113234). TRANSISTOR DEVICE WITH MULTI-LAYER CHANNEL STRUCTURE simplified abstract

TRANSISTOR DEVICE WITH MULTI-LAYER CHANNEL STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ya-Yun Cheng of Taichung City (TW)

Wen-Ling Lu of Taoyuan County (TW)

Yu-Chien Chiu of Hsinchu County (TW)

Chung-Wei Wu of Ju-Bei City (TW)

Zhiqiang Wu of Hsinchu County (TW)

TRANSISTOR DEVICE WITH MULTI-LAYER CHANNEL STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113234 titled 'TRANSISTOR DEVICE WITH MULTI-LAYER CHANNEL STRUCTURE

Simplified Explanation

The integrated chip described in the patent application includes a gate layer, an insulator layer, a channel structure, and a pair of source/drains. The channel structure consists of three different semiconductor layers: a first channel layer, a second channel layer, and a third channel layer. These layers are arranged between the insulator layer, the pair of source/drains, and a dielectric layer.

• The integrated chip includes a gate layer, insulator layer, channel structure, and pair of source/drains.
• The channel structure comprises three different semiconductor layers: first, second, and third channel layers.
• The layers are positioned between the insulator layer, source/drains, and dielectric layer.

Potential Applications

The technology described in the patent application could be applied in:

• Semiconductor manufacturing
• Integrated circuit design
• Electronics industry

Problems Solved

This technology helps in:

• Enhancing performance of integrated chips
• Improving efficiency of semiconductor devices
• Increasing reliability of electronic components

Benefits

The benefits of this technology include:

• Higher speed and performance
• Lower power consumption
• Enhanced durability and longevity of electronic devices

Potential Commercial Applications

The technology could be commercially applied in:

• Mobile devices
• Computers and laptops
• Automotive electronics

Possible Prior Art

One possible prior art for this technology could be:

• Previous patents related to semiconductor device structures

Unanswered Questions

How does this technology compare to existing semiconductor manufacturing processes?

This article does not provide a direct comparison with existing semiconductor manufacturing processes. It would be helpful to understand the specific advantages and differences of this technology compared to current methods.

What are the potential limitations or challenges in implementing this technology on a large scale?

The article does not address any potential limitations or challenges in scaling up the production of integrated chips using this technology. It would be important to explore any obstacles that may arise in mass production.

Original Abstract Submitted

an integrated chip including a gate layer. an insulator layer is over the gate layer. a channel structure is over the insulator layer. a pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. the channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. the first channel layer, the second channel layer, and the third channel layer include different semiconductors.