Taiwan semiconductor manufacturing company, ltd. (20240113097). Integrated Standard Cell Structure simplified abstract
Contents
- 1 Integrated Standard Cell Structure
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Integrated Standard Cell Structure - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Integrated Standard Cell Structure
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jhon Jhy Liaw of Hsinchu County (TW)
Integrated Standard Cell Structure - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113097 titled 'Integrated Standard Cell Structure
Simplified Explanation
The integrated circuit described in the patent application includes multiple standard cells with pfets and nfets integrated, dielectric gates, and filler cells between them. Here are some key points to note:
- Integrated circuit with multiple standard cells
- Each standard cell has pfet and nfet integrated
- Dielectric gates on standard cell boundaries
- Filler cell between adjacent standard cells
- Pfets and nfets formed on continuous active regions
Potential Applications
The technology described in this patent application could be applied in various fields such as:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
This technology helps in addressing the following issues:
- Efficient use of space on integrated circuits
- Improved performance of standard cells
- Enhanced integration of pfets and nfets
Benefits
The benefits of this technology include:
- Higher density of components on integrated circuits
- Better functionality and reliability of standard cells
- Streamlined manufacturing processes
Potential Commercial Applications
The technology described in this patent application could be commercially applied in:
- Mobile devices
- Computer hardware
- Automotive electronics
Possible Prior Art
One possible prior art related to this technology could be the use of filler cells in integrated circuits to optimize space and improve performance.
Unanswered Questions
How does this technology compare to existing standard cell designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing standard cell designs to evaluate the performance and efficiency of this new technology.
What are the specific manufacturing processes involved in implementing this integrated circuit design?
The article does not delve into the specific manufacturing processes required to implement this integrated circuit design.
Original Abstract Submitted
an integrated circuit includes a first standard cell having a first pfet and a first nfet integrated, and having a first dielectric gate on a first standard cell boundary. the integrated circuit further includes a second standard cell being adjacent to the first standard cell, having a second pfet and a second nfet integrated, and having a second dielectric gate on a second standard cell boundary. the integrated circuit also includes a first filler cell configured between the first and second standard cells, and spanning from the first dielectric gate to the second dielectric gate. the first pfet and the second pfet are formed on a first continuous active region. the first nfet and the second nfet are formed on a second continuous active region.
