Taiwan semiconductor manufacturing company, ltd. (20240112924). INTEGRATED CIRCUIT PACKAGES AND METHODS simplified abstract
Contents
- 1 INTEGRATED CIRCUIT PACKAGES AND METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT PACKAGES AND METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT PACKAGES AND METHODS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsu-Hsien Chen of Hsinchu (TW)
Chen-Shien Chen of Zhubei City (TW)
Chi-Yen Lin of Tainan City (TW)
INTEGRATED CIRCUIT PACKAGES AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240112924 titled 'INTEGRATED CIRCUIT PACKAGES AND METHODS
Simplified Explanation
The integrated circuit package described in the abstract includes integrated circuit dies with slanted sidewalls, forming a unique structure that allows for efficient packaging and interconnectivity. Here are some key points to explain this innovation:
- The package includes a first integrated circuit die with a first substrate and a first interconnect structure on the bottom surface.
- A first gap-fill dielectric layer surrounds the first integrated circuit die, providing insulation and support.
- A second integrated circuit die is positioned underneath the first die, with a second gap-fill dielectric layer around it.
- The slanted sidewalls of the dies create angles that optimize the space and interconnectivity within the package.
Potential Applications
This technology could be applied in various electronic devices requiring compact and efficient integrated circuit packaging, such as smartphones, tablets, and IoT devices.
Problems Solved
This innovation solves the problem of limited space and inefficient interconnectivity in traditional integrated circuit packages, allowing for more compact and high-performance electronic devices.
Benefits
The slanted sidewalls and unique structure of the integrated circuit package offer improved space utilization, enhanced interconnectivity, and overall better performance in electronic devices.
Potential Commercial Applications
The technology could be commercially applied in the semiconductor industry for manufacturing advanced integrated circuit packages for consumer electronics and industrial applications.
Possible Prior Art
One possible prior art in this field could be the use of traditional integrated circuit packaging methods with straight sidewalls, which may not offer the same level of efficiency and space optimization as the slanted sidewalls described in this patent application.
Unanswered Questions
How does this technology compare to existing integrated circuit packaging methods in terms of cost-effectiveness?
The abstract does not provide information on the cost implications of implementing this technology compared to traditional packaging methods. Further research or analysis would be needed to determine the cost-effectiveness of this innovation.
What impact could the slanted sidewalls of the integrated circuit dies have on signal integrity and performance?
The abstract does not address the potential impact of the slanted sidewalls on signal integrity and overall performance of the integrated circuit package. Additional testing or simulations may be required to evaluate these factors.
Original Abstract Submitted
an integrated circuit package including integrated circuit dies with slanted sidewalls and a method of forming are provided. the integrated circuit package may include a first integrated circuit die, a first gap-fill dielectric layer around the first integrated circuit die, a second integrated circuit die underneath the first integrated circuit die, and a second gap-fill dielectric layer around the second integrated circuit die. the first integrated circuit die may include a first substrate, wherein a first angle is between a first sidewall of the first substrate and a bottom surface of the first substrate, and a first interconnect structure on the bottom surface of the first substrate, wherein a second angle is between a first sidewall of the first interconnect structure and the bottom surface of the first substrate. the first angle may be larger than the second angle.
