Taiwan semiconductor manufacturing company, ltd. (20240106223). ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT AND METHOD OF OPERATING THE SAME simplified abstract

ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT AND METHOD OF OPERATING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yu-Hung Yeh of Hsinchu (TW)

Wun-Jie Lin of Hsinchu (TW)

Jam-Wem Lee of Hsinchu (TW)

ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240106223 titled 'ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT AND METHOD OF OPERATING THE SAME

Simplified Explanation

The abstract describes an electrostatic discharge (ESD) protection circuit in a semiconductor wafer, including diodes, an ESD clamp circuit, and a conductive structure on the backside of the wafer.

• The first diode is connected between an input/output (IO) pad and a first node.
• The second diode is connected to the first diode and between the IO pad and a second node.
• The ESD clamp circuit is within the wafer, connected to the first and second nodes, and between the first and second diodes.
• The ESD clamp circuit has a signal tap region in the wafer connected to a reference voltage supply.
• The second diode shares the signal tap region with the ESD clamp circuit.
• The conductive structure provides a reference voltage to the signal tap region.

Potential Applications

This technology can be applied in various semiconductor devices requiring ESD protection, such as integrated circuits, microprocessors, and memory chips.

Problems Solved

This technology helps prevent damage to semiconductor devices from electrostatic discharge events, ensuring their reliability and longevity.

Benefits

The ESD protection circuit enhances the robustness of semiconductor devices, improving their performance and durability in ESD-prone environments.

Potential Commercial Applications

Commercial applications include the production of ESD-protected semiconductor devices for consumer electronics, automotive electronics, and industrial equipment.

Possible Prior Art

One possible prior art could be the use of traditional ESD protection circuits in semiconductor devices, which may not be as efficient or integrated as the described technology.

How does this technology compare to existing ESD protection circuits in terms of performance and integration?

The article does not provide a direct comparison between this technology and existing ESD protection circuits in terms of performance and integration. Further research or testing may be needed to evaluate the effectiveness and efficiency of this innovation compared to traditional solutions.

What are the potential challenges in implementing this technology in mass production of semiconductor devices?

The article does not address the potential challenges in implementing this technology in mass production of semiconductor devices. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be significant considerations that need to be explored further.

Original Abstract Submitted

an electrostatic discharge (esd) protection circuit includes a first and second diode in a semiconductor wafer, an esd clamp circuit and a first conductive structure on a backside of a semiconductor wafer. the first diode is coupled between an input output (io) pad and a first node. the second diode is coupled to the first diode, and coupled between the io pad and a second node. the esd clamp circuit is in the semiconductor wafer, coupled to the first and second node, and between the first and second diode. the esd clamp circuit includes a first signal tap region in the semiconductor wafer that is coupled to a reference voltage supply. the second diode is coupled to and configured to share the first signal tap region with the esd clamp circuit. the first conductive structure is configured to provide a reference voltage to the first signal tap region.