Taiwan semiconductor manufacturing company, ltd. (20240105901). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing methods of interconnecting components in electronic devices?
- 1.9.3 What materials are used in the construction of the conductive vias and hardmask layer, and how do they contribute to the overall performance of the device?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105901 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes a device with an interconnect structure, a light emitting diode, conductive vias, and a hardmask layer for improved performance and alignment.
- Interconnect structure with first contact pad, second contact pad, and alignment mark
- Light emitting diode with cathode connected to first contact pad
- Encapsulant encapsulating the light emitting diode
- First conductive via with first seed layer connecting second contact pad
- Second conductive via with second seed layer connecting first seed layer
- Hardmask layer with second metal between second seed layer and alignment mark
Potential Applications
The technology described in the patent application could be applied in the manufacturing of electronic devices, such as LED displays, sensors, and optoelectronic components.
Problems Solved
This technology solves the problem of aligning and connecting different components within a device, ensuring proper functionality and performance.
Benefits
The benefits of this technology include improved electrical connectivity, alignment accuracy, and overall device reliability.
Potential Commercial Applications
The technology could be utilized in the production of consumer electronics, automotive lighting systems, medical devices, and industrial equipment.
Possible Prior Art
One possible prior art could be the use of conductive vias in electronic devices to improve connectivity and performance. Another could be the use of hardmask layers for protection and alignment purposes.
Unanswered Questions
How does this technology compare to existing methods of interconnecting components in electronic devices?
This technology offers improved alignment and connectivity compared to traditional methods, but the specific advantages over existing techniques are not clearly outlined in the abstract.
What materials are used in the construction of the conductive vias and hardmask layer, and how do they contribute to the overall performance of the device?
The abstract mentions the use of different metals in the vias and hardmask layer, but the specific materials and their impact on device performance are not detailed.
Original Abstract Submitted
in an embodiment, a device includes: an interconnect structure including a first contact pad, a second contact pad, and an alignment mark; a light emitting diode including a cathode and an anode, the cathode connected to the first contact pad; an encapsulant encapsulating the light emitting diode; a first conductive via extending through the encapsulant, the first conductive via including a first seed layer, the first seed layer contacting the second contact pad; a second conductive via extending through the encapsulant, the second conductive via including a second seed layer, the first seed layer and the second seed layer including a first metal; and a hardmask layer between the second seed layer and the alignment mark, the hardmask layer including a second metal, the second metal different from the first metal.
