Taiwan semiconductor manufacturing company, ltd. (20240105877). Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof simplified abstract

Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhy-Jyi Sze of Hsin-Chu City (TW)

Sin-Yi Jiang of Hsinchu (TW)

Yi-Shin Chu of Hsinchu City (TW)

Yin-Kai Liao of Taipei City (TW)

Hsiang-Lin Chen of Hsinchu (TW)

Kuan-Chieh Huang of Hsinchu City (TW)

Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105877 titled 'Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof

Simplified Explanation

The patent application describes germanium-based sensors, including a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer on a silicon substrate. Here are some key points to note:

• Germanium-based sensor with a germanium photodiode and JFET
• Germanium layer on or in a silicon substrate
• Doped silicon layer between the germanium layer and silicon substrate
• Doped polysilicon gate in the JFET
• Gate diffusion region in the germanium layer under the gate
• Pinned photodiode passivation layer in the germanium layer
• Pair of doped regions in the germanium layer as an e-lens

Potential Applications

Germanium-based sensors can be used in various applications such as:

• Imaging systems
• Remote sensing
• Medical devices
• Industrial inspection

Problems Solved

This technology addresses the following issues:

• Improved sensitivity and performance of sensors
• Integration of different components on a single substrate
• Enhanced signal processing capabilities

Benefits

The benefits of germanium-based sensors include:

• Higher efficiency in detecting and processing signals
• Compact design for space-constrained applications
• Improved reliability and durability

Potential Commercial Applications

The technology can be applied in commercial sectors like:

• Consumer electronics
• Automotive industry
• Aerospace and defense
• Healthcare

Possible Prior Art

Prior art in the field of semiconductor sensors may include:

• Silicon-based sensors with similar configurations
• Photodiodes and transistors integrated on a single substrate

Unanswered Questions

How does the performance of germanium-based sensors compare to silicon-based sensors in terms of sensitivity and speed?

Germanium is known for its superior performance in certain applications, but it would be interesting to see a direct comparison with silicon-based sensors.

Are there any limitations or challenges in scaling up the production of germanium-based sensors for mass-market applications?

While the technology shows promise, there may be obstacles in terms of cost-effectiveness and scalability that need to be addressed for widespread adoption.

Original Abstract Submitted

germanium-based sensors are disclosed herein. an exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (jfet) formed from a germanium layer disposed on and/or in a silicon substrate. a doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. in embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. the jfet has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. in some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. in some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.