Taiwan semiconductor manufacturing company, ltd. (20240105851). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Jiefeng Jeff Lin of Hsinchu (TW)
Chen-Hua Tsai of Hsinchu County (TW)
Shyh-Horng Yang of Hsinchu (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105851 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
Simplified Explanation
The abstract describes a method for forming a semiconductor device structure, which involves creating multiple well regions, deep well regions, and epitaxial structures in a substrate.
- Formation of first, second, and third well regions in the substrate.
- Creation of a deep well region under the first and third well regions.
- Partial removal of the substrate to form fins in each well region.
- Formation of epitaxial structures in the recesses created by the fins.
Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by optimizing the structure and layout of the components.
Benefits
- Enhanced functionality and speed of semiconductor devices. - Increased integration density on a chip. - Improved reliability and stability of the device.
Potential Commercial Applications
"Optimizing Semiconductor Device Structures for Enhanced Performance"
Possible Prior Art
There may be prior art related to the formation of well regions, deep well regions, and epitaxial structures in semiconductor devices. However, specific details would require further research.
Unanswered Questions
How does this method compare to existing techniques in terms of cost-effectiveness?
The abstract does not provide information on the cost implications of implementing this method compared to traditional approaches.
What are the specific performance improvements achieved by this method?
The abstract does not detail the exact performance enhancements resulting from the formation of the semiconductor device structure.
Original Abstract Submitted
a method for forming a semiconductor device structure is provided. the method includes forming a first well region and a second well region in a substrate. the method includes forming a third well region in the substrate and between the first well region and the second well region. the method includes forming a deep well region in the substrate and under the first well region and the third well region. the method includes partially removing the substrate to form a first fin, a second fin, and a third fin in the first well region, the second well region, and the third well region respectively. the method includes forming a first epitaxial structure, a second epitaxial structure, and a third epitaxial structure in the first recess, the second recess, and the third recess respectively.
