Taiwan semiconductor manufacturing company, ltd. (20240105591). INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105591 titled 'INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The abstract describes an interconnect structure with multiple dielectric layers and conductive features of varying dimensions and heights.
- The structure includes a first dielectric layer on a substrate, a second dielectric layer on top of the first layer, and a first conductive feature in the second dielectric layer.
- The first conductive feature has a smaller top critical dimension and height compared to a second conductive feature that spans both dielectric layers.
- The second conductive feature has a larger top critical dimension and height than the first feature.
Potential Applications
The interconnect structure described in the patent application could be used in semiconductor devices, integrated circuits, and other electronic components where precise and efficient interconnections are required.
Problems Solved
This technology addresses the challenge of creating interconnect structures with different critical dimensions and heights within multiple dielectric layers, allowing for improved performance and reliability in electronic devices.
Benefits
The benefits of this technology include enhanced signal transmission, reduced signal interference, increased device density, and improved overall functionality of electronic components.
Potential Commercial Applications
- "Innovative Interconnect Structure for Enhanced Electronic Devices"
Possible Prior Art
There may be prior art related to interconnect structures with varying dimensions and heights in multiple dielectric layers, but specific examples are not provided in the patent application.
Unanswered Questions
How does this interconnect structure compare to existing technologies in terms of performance and scalability?
The article does not provide a direct comparison with existing technologies, so it is unclear how this innovation stacks up against current industry standards.
Are there any limitations or drawbacks to implementing this interconnect structure in practical applications?
The potential limitations or challenges of integrating this technology into real-world electronic devices are not discussed in the article, leaving room for further exploration and analysis.
Original Abstract Submitted
an interconnect structure and methods of forming the same are described. in some embodiments, the structure includes a first dielectric layer disposed over a substrate, a second dielectric layer disposed over the first dielectric layer, and a first conductive feature disposed in the second dielectric layer. the first conductive feature has a first top critical dimension and a first height. the structure further includes a second conductive feature disposed in the first and second dielectric layers. the second conductive feature has a second top critical dimension substantially greater than the first top critical dimension and a second height substantially greater than the first height.
