Taiwan semiconductor manufacturing company, ltd. (20240105258). MEMORY DEVICE AND METHOD FOR FORMING THE SAME simplified abstract

MEMORY DEVICE AND METHOD FOR FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon Jhy Liaw of Hsinchu County (TW)

MEMORY DEVICE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105258 titled 'MEMORY DEVICE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The method described in the patent application involves forming various transistors and electrical connections on a substrate to create a memory device. Here are the key points of the innovation:

• Formation of multiple transistors (pull-up, pull-down, pass-gate) on a substrate
• Creation of bit lines and word lines for electrical connections
• Removal of the substrate to expose certain transistor structures
• Formation of power lines for electrical connections to specific transistor structures

• • Potential Applications:**

This technology can be applied in the manufacturing of memory devices such as DRAM, SRAM, or flash memory.

• • Problems Solved:**

This method provides a way to efficiently form memory devices with improved performance and reliability.

• • Benefits:**

The innovation allows for the creation of memory devices with enhanced functionality and stability.

• • Potential Commercial Applications:**

The technology can be utilized in the semiconductor industry for producing advanced memory devices with increased storage capacity and speed.

• • Possible Prior Art:**

One possible prior art could be the traditional methods of forming memory devices using different transistor configurations and electrical connections.

• • Unanswered Questions:**

1. How does this method compare to existing techniques in terms of memory device performance and reliability? 2. Are there any specific challenges or limitations associated with implementing this technology in large-scale production?

Original Abstract Submitted

a method for forming a memory device includes forming a first pull-up transistor, a first pull-down transistor, a first pass-gate transistor, a second pull-up transistor, a second pull-down transistor, a second pass-gate transistor over a substrate; forming a first bit line and a second bit line electrically connected to a source/drain epitaxy structure of the first pass-gate transistor and a source/drain epitaxy structure of the second pass-gate transistor; forming a word line electrically connected to gate structures of the first and second pass-gate transistors; removing the substrate to expose a source/drain epitaxy structure of the first pull-down transistor and a source/drain epitaxy structure of the second pull-down transistor; and forming a first power line electrically connected to the bottom surface of the source/drain epitaxy structure of the first pull-down transistor and electrically connected to the bottom surface of the source/drain epitaxy structure of the second pull-down transistor.