Taiwan semiconductor manufacturing company, ltd. (20240105241). MEMORY DEVICE INCLUDING SEPARATE NEGATIVE BIT LINE simplified abstract

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MEMORY DEVICE INCLUDING SEPARATE NEGATIVE BIT LINE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chih-Yu Lin of Taichung City (TW)

Yi-Hsin Nien of Hsinchu City (TW)

Hidehiro Fujiwara of Hsinchu City (TW)

Yen-Huei Chen of Jhudong Township (TW)

MEMORY DEVICE INCLUDING SEPARATE NEGATIVE BIT LINE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105241 titled 'MEMORY DEVICE INCLUDING SEPARATE NEGATIVE BIT LINE

Simplified Explanation

The abstract of the patent application describes a memory device with a set of memory cells, first and second bit lines, and a switch between the bit lines.

  • The memory device consists of a set of memory cells.
  • The first bit line extends along a direction and is connected to a subset of the memory cells.
  • A second bit line also extends along the same direction.
  • A switch is present between the first and second bit lines.

Potential Applications

The technology described in this patent application could be applied in:

  • Computer memory systems
  • Mobile devices
  • Embedded systems

Problems Solved

This technology addresses issues such as:

  • Improving memory access speed
  • Enhancing memory storage capacity
  • Increasing data transfer efficiency

Benefits

The benefits of this technology include:

  • Faster data retrieval
  • Higher memory density
  • Improved overall system performance

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Data centers
  • Automotive industry

Possible Prior Art

One possible prior art related to this technology is the use of switches in memory devices to control data flow.

Unanswered Questions

How does this technology compare to existing memory devices in terms of speed and efficiency?

This article does not provide a direct comparison with existing memory devices in terms of speed and efficiency.

Are there any limitations or drawbacks to implementing this technology in practical applications?

The article does not mention any limitations or drawbacks to implementing this technology in practical applications.


Original Abstract Submitted

disclosed herein are related to a memory device. in one aspect, a memory device includes a set of memory cells. in one aspect, the memory device includes a first bit line extending along a direction. the first bit line may be coupled to a subset of the set of memory cells disposed along the direction. in one aspect, the memory device includes a second bit line extending along the direction. in one aspect, the memory device includes a switch coupled between the first bit line and the second bit line.