Taiwan semiconductor manufacturing co., ltd. (20240130100). MEMORY DEVICE, AND METHOD FOR FORMING THEREOF simplified abstract

MEMORY DEVICE, AND METHOD FOR FORMING THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Hung-Li Chiang of Taipei City (TW)

Jer-Fu Wang of Taipei City (TW)

Yi-Tse Hung of Hsinchu (TW)

Chao-Ching Cheng of Hsinchu City (TW)

Iuliana Radu of Hsinchu County (TW)

MEMORY DEVICE, AND METHOD FOR FORMING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130100 titled 'MEMORY DEVICE, AND METHOD FOR FORMING THEREOF

Simplified Explanation

The memory device described in the abstract includes a write pass-gate transistor, a read pass-gate transistor, a write word line, and a read word line. The write pass-gate transistor is in a lower layer than the read pass-gate transistor, and the write word line is electrically coupled to the write pass-gate transistor through a separate path from the read word line to the read pass-gate transistor.

• Write pass-gate transistor in first layer
• Read pass-gate transistor in second layer above the first layer
• Write word line in metallization layer above first layer
• Read word line in metallization layer
• Write path different from read path

Potential Applications

This technology could be applied in:

• Memory devices
• Integrated circuits
• Data storage systems

Problems Solved

This innovation helps in:

• Improving memory device performance
• Enhancing data storage efficiency
• Reducing signal interference

Benefits

The benefits of this technology include:

• Faster data access
• Higher data transfer speeds
• Increased reliability of memory devices

Potential Commercial Applications

This technology could be used in:

• Consumer electronics
• Computer hardware
• Telecommunications equipment

Possible Prior Art

One possible prior art for this technology could be the use of multiple layers in memory devices to improve performance and efficiency.

Unanswered Questions

How does this technology compare to existing memory device designs?

This article does not provide a direct comparison with other memory device designs to showcase the advantages of this innovation.

What are the specific performance improvements achieved with this technology?

The article does not detail the specific performance enhancements, such as speed or capacity, that this technology offers compared to traditional memory devices.

Original Abstract Submitted

a memory device is provided. the memory device includes a write pass-gate transistor, a read pass-gate transistor, a write word line, and a read word line. the write pass-gate transistor is disposed in a first layer. the read pass-gate transistor is disposed in a second layer above the first layer. the write word line is disposed in a metallization layer above the first layer and electrically coupled to the write pass-gate transistor through a write path. the read word line is disposed in the metallization layer and electrically coupled to the read pass-gate transistor through a read path. the write path is different from the read path.