Taiwan semiconductor manufacturing co., ltd. (20240128147). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Shih Wei Liang of Hsinchu (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128147 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
A semiconductor device is provided with a supporting silicon layer and a memory module bonded via a bonding structure with at least one bonding film less than 200 Å thick.
- The semiconductor device includes a supporting silicon layer and a memory module.
- The memory module and the supporting silicon layer are bonded via a bonding structure.
- The bonding structure includes at least one bonding film with a thickness less than 200 Å.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Memory storage devices
Problems Solved
This technology helps in:
- Improving bonding between memory modules and supporting silicon layers
- Enhancing the performance and reliability of semiconductor devices
Benefits
The benefits of this technology include:
- Increased efficiency in semiconductor devices
- Enhanced durability and longevity of memory modules
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Electronics industry
- Semiconductor manufacturing companies
Possible Prior Art
One possible prior art could be the use of bonding structures in semiconductor devices with varying thicknesses of bonding films.
What are the specific materials used in the bonding structure of this semiconductor device?
The specific materials used in the bonding structure of this semiconductor device are not mentioned in the abstract.
How does the thickness of the bonding film impact the performance of the semiconductor device?
The abstract does not provide information on how the thickness of the bonding film impacts the performance of the semiconductor device.
Original Abstract Submitted
a semiconductor device is provided. the semiconductor includes a supporting silicon layer and a memory module. the memory module and the supporting silicon layer are bonded via a bonding structure. the bonding structure includes at least one bonding film whose thickness is less than 200 Å.
