View source for Taiwan semiconductor manufacturing co., ltd. (20240128126). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE simplified abstract

=METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing co., ltd.|taiwan semiconductor manufacturing co., ltd.]]


[[Category:taiwan semiconductor manufacturing co., ltd.]]

==Inventor(s)==

[[:Category:Shu-Uei Jang of Hsinchu (TW)|Shu-Uei Jang of Hsinchu (TW)]][[Category:Shu-Uei Jang of Hsinchu (TW)]]

[[:Category:Chen-Huang Huang of Hsinchu (TW)|Chen-Huang Huang of Hsinchu (TW)]][[Category:Chen-Huang Huang of Hsinchu (TW)]]

[[:Category:Ryan Chia-Jen Chen of Hsinchu (TW)|Ryan Chia-Jen Chen of Hsinchu (TW)]][[Category:Ryan Chia-Jen Chen of Hsinchu (TW)]]

[[:Category:Shiang-Bau Wang of Pingzchen City (TW)|Shiang-Bau Wang of Pingzchen City (TW)]][[Category:Shiang-Bau Wang of Pingzchen City (TW)]]

[[:Category:Shu-Yuan Ku of Zhubei City (TW)|Shu-Yuan Ku of Zhubei City (TW)]][[Category:Shu-Yuan Ku of Zhubei City (TW)]]

==METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240128126 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE

==Simplified Explanation==

The patent application describes a method for creating air spacers in a semiconductor device by cutting a conductive gate into two parts, applying dielectric material to the sidewalls, removing spacers, and capping voids with dielectric material.

* A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate.
* Oxide is removed from the sidewalls of the first conductive gate, and dielectric material is applied to the sidewalls.
* Spacers adjacent to the conductive gate are removed to form voids, which are then capped with dielectric material to form air spacers.

== Potential Applications ==
The technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors or memory chips.

== Problems Solved ==
This innovation helps in reducing parasitic capacitance and improving the overall performance and efficiency of semiconductor devices.

== Benefits ==
The use of air spacers can enhance the electrical characteristics of the semiconductor device, leading to faster operation and lower power consumption.

== Potential Commercial Applications ==
The technology could find applications in the production of smartphones, computers, servers, and other electronic devices requiring high-speed and energy-efficient semiconductor components.

== Possible Prior Art ==
One possible prior art could be the use of traditional spacers in semiconductor devices to control the channel width and improve device performance.

=== Unanswered Questions ===

=== How does this technology compare to existing methods of creating spacers in semiconductor devices? ===
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the specific advantages or disadvantages of this new approach.

=== What are the specific performance improvements achieved by using air spacers in semiconductor devices? ===
The article does not delve into the quantitative or qualitative enhancements in device performance resulting from the implementation of air spacers, leaving this aspect open for further exploration.


==Original Abstract Submitted==

a conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. an oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.



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