Taiwan semiconductor manufacturing co., ltd. (20240126174). LITHOGRAPHY simplified abstract
Contents
- 1 LITHOGRAPHY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LITHOGRAPHY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
LITHOGRAPHY
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Meng-Che Tu of Hsinchu City (TW)
Po-Han Wang of Hsinchu City (TW)
Sih-Hao Liao of New Taipei City (TW)
Yu-Hsiang Hu of Hsinchu City (TW)
Hung-Jui Kuo of Hsinchu City (TW)
LITHOGRAPHY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240126174 titled 'LITHOGRAPHY
Simplified Explanation
The method described in the abstract involves exposing a photoresist to two different light-exposures through two different masks, each including a stitching region with opaque portions.
- Photoresist exposed to first light-exposure through first mask
- First mask includes first stitching region
- First portion of photoresist corresponding to first opaque portion of first stitching region is unexposed
- Photoresist exposed to second light-exposure through second mask
- Second mask includes second stitching region
- Second portion of photoresist corresponding to second opaque portion of second stitching region is unexposed and overlaps with first portion of photoresist
Potential Applications
This technology could be applied in the semiconductor industry for photolithography processes.
Problems Solved
This method helps in achieving precise alignment and patterning of features on semiconductor wafers.
Benefits
- Improved accuracy in patterning - Enhanced resolution in semiconductor manufacturing processes
Potential Commercial Applications
Optimizing Photolithography Processes for Semiconductor Manufacturing
Possible Prior Art
Prior art may include similar methods for photolithography processes in semiconductor manufacturing.
Unanswered Questions
How does this method compare to existing photolithography techniques in terms of efficiency and accuracy?
The article does not provide a direct comparison with existing techniques.
Are there any limitations or challenges associated with implementing this method in large-scale semiconductor manufacturing facilities?
The article does not address potential limitations or challenges in large-scale implementation.
Original Abstract Submitted
a method includes the following steps. a photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a first portion of the photoresist corresponding to a first opaque portion of the first stitching region is unexposed. the photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region, and a second portion of the photoresist corresponding to a second opaque portion of the second stitching region is unexposed and is overlapping with the first portion of the photoresist.
