Taiwan semiconductor manufacturing co., ltd. (20240099005). FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract
Contents
- 1 FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sheng-Chih Lai of Hsinchu County (TW)
Chung-Te Lin of Tainan City (TW)
FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099005 titled 'FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME
Simplified Explanation
The abstract describes a memory device with a complex structure involving various layers and materials such as silicide layers, oxide layers, and cobalt, titanium, tungsten, or palladium.
- The memory device includes a bottom dielectric layer, a gate structure, a stack structure, and a dielectric layer.
- The stack structure consists of a first silicide layer, a second silicide layer, an oxide layer, a channel region, and an isolation layer.
- The first and second silicide layers contain cobalt, titanium, tungsten, or palladium.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Memory storage devices
- Integrated circuits
Problems Solved
This technology helps in:
- Improving memory device performance
- Enhancing data storage capacity
- Increasing device reliability
Benefits
The benefits of this technology include:
- Higher efficiency in memory devices
- Enhanced speed and performance
- Improved durability and longevity
Potential Commercial Applications
A potential commercial application for this technology could be:
- Production of advanced memory devices for consumer electronics
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to memory device structures and materials
Unanswered Questions
How does this technology compare to existing memory device structures?
This article does not provide a direct comparison with existing memory device structures, leaving the reader to wonder about the specific advantages or differences.
What are the specific performance metrics improved by this technology?
The article does not detail the specific performance metrics that are enhanced by the described memory device structure, leaving the reader curious about the exact improvements in speed, capacity, or reliability.
Original Abstract Submitted
memory devices and methods of forming the same are provided. a memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. the stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending bet ween the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. the first and second silicide layers include cobalt, titanium, tungsten, or palladium.
