Taiwan semiconductor manufacturing co., ltd. (20240098988). INTEGRATED CIRCUIT WITH BACK-SIDE METAL LINE, METHOD OF FABRICATING THE SAME, AND LAYOUT METHOD simplified abstract
Contents
- 1 INTEGRATED CIRCUIT WITH BACK-SIDE METAL LINE, METHOD OF FABRICATING THE SAME, AND LAYOUT METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT WITH BACK-SIDE METAL LINE, METHOD OF FABRICATING THE SAME, AND LAYOUT METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 What are the specific parameters for optimizing the layout of integrated circuits using this method?
- 1.11 How does this technology compare to existing methods for generating integrated circuit layout diagrams?
- 1.12 Original Abstract Submitted
INTEGRATED CIRCUIT WITH BACK-SIDE METAL LINE, METHOD OF FABRICATING THE SAME, AND LAYOUT METHOD
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chien-Ying Chen of Hsinchu (TW)
INTEGRATED CIRCUIT WITH BACK-SIDE METAL LINE, METHOD OF FABRICATING THE SAME, AND LAYOUT METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098988 titled 'INTEGRATED CIRCUIT WITH BACK-SIDE METAL LINE, METHOD OF FABRICATING THE SAME, AND LAYOUT METHOD
Simplified Explanation
The method described in the patent application involves generating an integrated circuit layout diagram by overlapping an active region with gate regions to define a program transistor and a read transistor of a one-time-programmable (OTP) bit, overlapping a through via region with a gate region or the active region, and overlapping the through via region with a metal region of a back-side metal layer.
- Overlapping active region with gate regions to define program and read transistors
- Overlapping through via region with gate region or active region
- Overlapping through via region with metal region of back-side metal layer
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the development of more efficient and compact integrated circuits.
Problems Solved
This technology solves the problem of optimizing the layout of integrated circuits to improve performance and functionality.
Benefits
The benefits of this technology include increased efficiency, improved performance, and enhanced functionality of integrated circuits.
Potential Commercial Applications
The potential commercial applications of this technology could be in the manufacturing of various electronic devices such as smartphones, computers, and other consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the use of similar techniques in the design and fabrication of integrated circuits in the semiconductor industry.
Unanswered Questions
What are the specific parameters for optimizing the layout of integrated circuits using this method?
The specific parameters for optimizing the layout of integrated circuits using this method are not detailed in the abstract. Further information on the specific design considerations and criteria would be helpful for a better understanding of the technology.
How does this technology compare to existing methods for generating integrated circuit layout diagrams?
The abstract does not provide a comparison of this technology to existing methods for generating integrated circuit layout diagrams. Understanding the advantages and limitations of this technology in comparison to current practices would be valuable for assessing its potential impact in the industry.
Original Abstract Submitted
a method of generating an integrated circuit (ic) layout diagram includes overlapping an active region with a plurality of gate regions, thereby defining a program transistor and a read transistor of a one-time-programmable (otp) bit, overlapping a through via region with a gate region of the plurality of gate regions or with the active region, and overlapping the through via region with a metal region of a back-side metal layer.
