Taiwan semiconductor manufacturing co., ltd. (20240097041). THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THIN FILM TRANSISTOR simplified abstract
Contents
THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THIN FILM TRANSISTOR
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Neil Quinn Murray of Hsinchu City (TW)
Mauricio Manfrini of Hsinchu County (TW)
Sai-Hooi Yeong of Hsinchu County (TW)
THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THIN FILM TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240097041 titled 'THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THIN FILM TRANSISTOR
Simplified Explanation
The abstract describes a thin film transistor with specific components and layers, as well as a method of fabricating it.
- Gate metal
- Gate dielectric layer
- Semiconductor layer
- Interlayer dielectric with contact hole
- Source/drain metal
- First liner
- Second liner
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- Potential Applications
The thin film transistor can be used in various electronic devices such as displays, sensors, and integrated circuits.
- Problems Solved
This technology provides a more efficient and compact way of creating transistors for electronic devices.
- Benefits
The thin film transistor offers improved performance, lower power consumption, and higher integration density in electronic devices.
- Potential Commercial Applications
This technology can be applied in the manufacturing of smartphones, tablets, TVs, and other electronic devices for consumer and industrial use.
- Possible Prior Art
One example of prior art in thin film transistors is the work done by researchers in academia and industry to develop similar semiconductor devices for electronic applications.
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- Unanswered Questions
- How does the thin film transistor compare to traditional transistors in terms of performance and efficiency?
The article does not provide a direct comparison between thin film transistors and traditional transistors in terms of performance and efficiency. Further research or testing may be needed to determine the advantages and limitations of this technology.
- What are the potential challenges in scaling up the production of thin film transistors for mass commercial use?
The article does not address the potential challenges in scaling up the production of thin film transistors for mass commercial use. Factors such as cost, scalability, and manufacturing processes may need to be considered and explored further to understand the feasibility of large-scale production.
Original Abstract Submitted
a thin film transistor, a semiconductor device having a thin film transistor and a method of fabricating a thin film transistor are provided. the thin film transistor includes a gate metal; a gate dielectric layer disposed on the gate metal; a semiconductor layer disposed on the gate dielectric layer; an interlayer dielectric disposed on the semiconductor layer and having a contact hole over the semiconductor layer; a source/drain metal disposed in the contact hole; a first liner disposed between the interlayer dielectric and the source/drain metal; and a second liner disposed between the first liner and the source/drain metal and being in contact with the semiconductor layer in the contact hole.
