Taiwan semiconductor manufacturing co., ltd. (20240097035). EPITAXIAL SOURCE/DRAIN STRUCTURES FOR MULTIGATE DEVICES AND METHODS OF FABRICATING THEREOF simplified abstract

EPITAXIAL SOURCE/DRAIN STRUCTURES FOR MULTIGATE DEVICES AND METHODS OF FABRICATING THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chen-Ming Lee of Yangmei City (TW)

I-Wen Wu of Hsinchu City (TW)

Po-Yu Huang of Hsinchu (TW)

Fu-Kai Yang of Hsinchu City (TW)

Mei-Yun Wang of Hsin-Chu (TW)

EPITAXIAL SOURCE/DRAIN STRUCTURES FOR MULTIGATE DEVICES AND METHODS OF FABRICATING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097035 titled 'EPITAXIAL SOURCE/DRAIN STRUCTURES FOR MULTIGATE DEVICES AND METHODS OF FABRICATING THEREOF

Simplified Explanation

The abstract describes a patent application related to epitaxial source/drain structures for improving the performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs.

• Epitaxial source/drain structures enhance the performance of multigate devices.
• The structures have an inner portion with a higher dopant concentration and an outer portion with a lower dopant concentration.
• The outer portion is located between the inner portion and the channel layer.
• In some cases, the outer portion physically contacts the dielectric substrate.

Potential Applications

The technology can be applied in the semiconductor industry for improving the performance of multigate devices, leading to faster and more efficient electronic devices.

Problems Solved

This technology addresses the challenge of improving the performance of multigate devices by optimizing the source/drain structures, resulting in enhanced device performance.

Benefits

The benefits of this technology include increased device performance, improved efficiency, and potentially lower power consumption in electronic devices.

Potential Commercial Applications

The technology has potential commercial applications in the semiconductor industry for manufacturing advanced electronic devices with superior performance and efficiency.

Possible Prior Art

One possible prior art in this field could be the use of different source/drain structures in semiconductor devices to enhance device performance.

How does the epitaxial source/drain structure impact the overall performance of the multigate device?

The epitaxial source/drain structure affects the device's performance by optimizing the dopant concentration and contact with the substrate, but the specific impact on performance metrics like speed or power consumption is not detailed in the abstract.

What fabrication methods are used to create the epitaxial source/drain structures in multigate devices?

The abstract mentions methods of fabricating the structures, but the specific techniques or processes involved are not elaborated upon.

Original Abstract Submitted

epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (fets) or gate-all-around (gaa) fets, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. an exemplary device includes a dielectric substrate. the device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. the channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. the epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. the inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. in some embodiments, the outer portion physically contacts the dielectric substrate.