Taiwan semiconductor manufacturing co., ltd. (20240097007). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Shih-Yao Lin of New Taipei City (TW)

Hsiao Wen Lee of Hsinchu City (TW)

Ya-Yi Tsai of Hsinchu City (TW)

Shu-Uei Jang of Hsinchu City (TW)

Chih-Han Lin of Hsinchu City (TW)

Shu-Yuan Ku of Zhubei City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097007 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a semiconductor device with an isolation region, channels including an active and inactive channel, a dummy fin, an active gate, and a dielectric material.

• The isolation region is on the substrate.
• Channels extend through the isolation region, including an active and inactive channel.
• A dummy fin is between the active and inactive channels.
• An active gate is over the active and inactive channels, contacting the isolation region.
• A dielectric material extends through the active gate, contacting the top of the dummy fin.
• The inactive channel is the closest inactive channel to the dielectric material.

Potential Applications

This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as in mobile devices, computers, and automotive systems.

Problems Solved

This innovation helps in improving the performance and efficiency of semiconductor devices by optimizing the layout and structure of the channels and gates, leading to better overall functionality.

Benefits

The benefits of this technology include enhanced device performance, increased energy efficiency, and potentially reduced manufacturing costs due to optimized design and layout.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for the production of next-generation integrated circuits and electronic components.

Possible Prior Art

One possible prior art for this technology could be the use of dummy structures in semiconductor devices to improve performance and reduce interference between components.

How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor device designs, so it is unclear how this technology specifically improves performance and efficiency compared to current solutions.

What are the specific manufacturing processes involved in implementing this technology in semiconductor device production?

The article does not detail the specific manufacturing processes required to implement this technology, leaving a gap in understanding the practical steps needed to bring this innovation to market.

Original Abstract Submitted

a semiconductor device is described. an isolation region is disposed on the substrate. a plurality of channels extend through the isolation region from the substrate. the channels including an active channel and an inactive channel. a dummy fin is disposed on the isolation region and between the active channel and the inactive channel. an active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. a dielectric material extends through the active gate and contacts a top of the dummy fin. the inactive channel is a closest inactive channel to the dielectric material. a long axis of the active channel extends in a first direction. a long axis of the active gate extends in a second direction. the active channel extends in a third direction from the substrate. the dielectric material is closer to the inactive channel than to the active channel.