Taiwan semiconductor manufacturing co., ltd. (20240096929). METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR simplified abstract
Contents
- 1 METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Yan-Jhih Huang of Hsinchu (TW)
Chien-Chung Chen of Hsinchu (TW)
Yung-Hsieh Lin of Hsinchu (TW)
METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096929 titled 'METHOD OF MAKING SEMICONDUCTOR DEVICE INCLUDING METAL INSULATOR METAL CAPACITOR
Simplified Explanation
The abstract describes a method of making a semiconductor device by forming a circuit layer over a substrate, depositing an insulator, patterning the insulator to define trenches, filling the trenches to create a test line and a capacitor.
- Forming a circuit layer over a substrate
- Depositing an insulator over the substrate
- Patterning the insulator to define test line trench, first trench, and second trench
- Filling the test line trench to create a test line connected to the circuit layer
- Filling the first and second trenches to define a capacitor
Potential Applications
This technology could be applied in the manufacturing of various semiconductor devices, such as integrated circuits, memory chips, and microprocessors.
Problems Solved
This technology solves the problem of efficiently creating test lines and capacitors in semiconductor devices, improving their performance and functionality.
Benefits
The benefits of this technology include increased efficiency in semiconductor device manufacturing, improved electrical connections, and enhanced overall device performance.
Potential Commercial Applications
Potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions developing advanced electronic devices.
Possible Prior Art
One possible prior art for this technology could be the traditional methods of creating test lines and capacitors in semiconductor devices, which may be less efficient and precise compared to the method described in the patent application.
Unanswered Questions
How does this method compare to existing techniques in terms of cost-effectiveness?
The article does not provide information on the cost-effectiveness of this method compared to traditional techniques.
What are the specific materials used in this method and how do they impact the performance of the semiconductor device?
The article does not detail the specific materials used in the method and their effects on the device's performance.
Original Abstract Submitted
a method of making a semiconductor device includes forming a circuit layer over a substrate. the method further includes depositing an insulator over the substrate. the method further includes patterning the insulator to define a test line trench, a first trench, and a second trench, wherein the first trench is on a portion of the substrate exposed by the circuit layer. the method further includes filling the test line trench to define a test line electrically connected to the circuit layer. the method further includes filling the first trench and the second trench to define a capacitor.
