Taiwan semiconductor manufacturing co., ltd. (20240096873). ESD STRUCTURE simplified abstract
Contents
ESD STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chun-Chia Hsu of Kaohsiung City (TW)
Tung-Heng Hsieh of Hsinchu County (TW)
Yung-Feng Chang of Hsinchu City (TW)
Bao-Ru Young of Zhubei City (TW)
Chih-Hung Wang of Hsinchu City (TW)
ESD STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096873 titled 'ESD STRUCTURE
Simplified Explanation
The abstract describes an electrostatic discharge (ESD) structure with semiconductor layers stacked between epitaxy regions and conductive features formed over these regions.
- Semiconductor substrate with first and second epitaxy regions
- Plurality of semiconductor layers stacked over the substrate
- First and second conductive features outside oxide diffusion region
- Third and fourth conductive features within oxide diffusion region
- Oxide diffusion region between first and second conductive features
Potential Applications
The ESD structure can be used in electronic devices to protect against electrostatic discharge events.
Problems Solved
The ESD structure helps prevent damage to electronic components from ESD events, ensuring the reliability and longevity of the devices.
Benefits
- Enhanced protection against electrostatic discharge - Improved reliability of electronic devices - Longevity of electronic components
Potential Commercial Applications
The ESD structure can be implemented in various electronic devices such as smartphones, tablets, laptops, and other consumer electronics to safeguard against ESD damage.
Possible Prior Art
Prior art may include existing ESD protection structures in semiconductor devices, such as diodes and transient voltage suppressors.
Unanswered Questions
How does the ESD structure compare to traditional ESD protection devices in terms of performance and cost?
The article does not provide a direct comparison between the ESD structure and traditional ESD protection devices in terms of performance and cost.
What are the specific manufacturing processes involved in creating the ESD structure, and how do they contribute to its effectiveness?
The article does not delve into the specific manufacturing processes involved in creating the ESD structure and how they contribute to its effectiveness.
Original Abstract Submitted
electrostatic discharge (esd) structures are provided. an esd structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of semiconductor layers. the semiconductor layers are stacked over the semiconductor substrate and between the first and second epitaxy regions. a first conductive feature is formed over the first epitaxy region and outside an oxide diffusion region. a second conductive feature is formed over the second epitaxy region and outside the oxide diffusion region. a third conductive feature is formed over the first epitaxy region and within the oxide diffusion region. a fourth conductive feature is formed over the second epitaxy region and within the oxide diffusion region. the oxide diffusion region is disposed between the first and second conductive features.
