Taiwan semiconductor manufacturing co., ltd. (20240096865). SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Hui-Zhong Zhuang of Hsinchu (TW)
Chih-Liang Chen of Hsinchu (TW)
SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096865 titled 'SEMICONDUCTOR DEVICE, METHOD OF AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a first metal layer, a second metal layer, a drain/source contact, and at least one conductive via. The first metal layer has a first conductor and a second conductor that are adjacent to each other, while the second metal layer has a third conductor that extends in a different direction. The drain/source contact is connected to the second conductor, and the conductive via connects the first and second conductors through the third conductor.
- First metal layer with first and second conductors
- Second metal layer with a third conductor
- Drain/source contact connected to the second conductor
- Conductive via connecting the first and second conductors through the third conductor
Potential Applications
The technology described in the patent application could be applied in various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This technology helps in improving the connectivity and efficiency of semiconductor devices by providing a direct connection between different metal layers and conductors.
Benefits
The benefits of this technology include enhanced performance, increased reliability, and reduced power consumption in semiconductor devices.
Potential Commercial Applications
The technology could be utilized in the manufacturing of advanced electronic devices, leading to faster and more efficient products in the market.
Possible Prior Art
One possible prior art for this technology could be the use of conductive vias in semiconductor devices to improve connectivity between different metal layers and conductors.
Unanswered Questions
How does this technology compare to existing methods of connecting metal layers in semiconductor devices?
This article does not provide a direct comparison between this technology and existing methods of connecting metal layers in semiconductor devices.
What are the specific manufacturing processes involved in implementing this technology in semiconductor devices?
The article does not delve into the specific manufacturing processes required to implement this technology in semiconductor devices.
Original Abstract Submitted
a semiconductor device, includes a first metal layer, a second metal layer, a drain/source contact and at least one conductive via. the first metal layer has a first conductor that extends in a first direction and a second conductor that extends in the first direction, wherein the second conductor is directly adjacent to the first conductor. the second metal layer has a third conductor that extends in a second direction, wherein the second direction is transverse to the first direction. the drain/source contact extends in the second direction and is connected to the second conductor. the at least one conductive via connects the first conductor and the second conductor through the third conductor.
