Taiwan semiconductor manufacturing co., ltd. (20240096848). INTEGRATED CIRCUIT PACKAGE AND METHOD simplified abstract

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INTEGRATED CIRCUIT PACKAGE AND METHOD

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Chih-Wei Wu of Zhuangwei Township (TW)

Ching-Feng Yang of Taipei (TW)

Ying-Ching Shih of Hsinchu (TW)

An-Jhih Su of Taoyuan (TW)

Wen-Chih Chiou of Zhunan Township (TW)

INTEGRATED CIRCUIT PACKAGE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096848 titled 'INTEGRATED CIRCUIT PACKAGE AND METHOD

Simplified Explanation

The method described in the abstract involves manufacturing a semiconductor device by singulating a semiconductor die from a wafer using a dicing process and thinning the backside of the wafer.

  • Forming a first bonding layer over a substrate of a wafer
  • Performing a first dicing process to form grooves between semiconductor dies
  • Performing a second dicing process to form a trench between the grooves
  • Thinning the backside of the wafer to singulate the semiconductor die

Potential Applications

This technology could be applied in the manufacturing of various semiconductor devices such as microchips, sensors, and integrated circuits.

Problems Solved

This method solves the problem of efficiently singulating semiconductor dies from a wafer while maintaining structural integrity and minimizing damage.

Benefits

The benefits of this technology include improved manufacturing efficiency, reduced material waste, and enhanced device performance due to precise singulation.

Potential Commercial Applications

Potential commercial applications of this technology include the production of consumer electronics, medical devices, automotive components, and industrial equipment.

Possible Prior Art

One possible prior art for this technology could be the use of laser cutting or mechanical sawing processes for singulating semiconductor dies from wafers.

Unanswered Questions

How does this method compare to traditional singulation techniques in terms of cost and efficiency?

This article does not provide a direct comparison between this method and traditional singulation techniques.

Are there any limitations or challenges associated with thinning the backside of the wafer during the singulation process?

The article does not address any potential limitations or challenges that may arise during the thinning process.


Original Abstract Submitted

a method of manufacturing a semiconductor device includes forming a first bonding layer over a substrate of a first wafer, the first wafer including a first semiconductor die and a second semiconductor die, performing a first dicing process to form two grooves that extend through the first bonding layer, the two grooves being disposed between the first semiconductor die and the second semiconductor die, performing a second dicing process to form a trench that extends through the first bonding layer and partially through the substrate of the first wafer, where the trench is disposed between the two grooves, and thinning a backside of the substrate of the first wafer until the first semiconductor die is singulated from the second semiconductor die.