Taiwan semiconductor manufacturing co., ltd. (20240096827). SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chen-Shien Chen of Zhubei City (TW)
Ting-Li Yang of Tainan City (TW)
Po-Hao Tsai of Taoyuan City (TW)
Ming-Da Cheng of Taoyuan City (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096827 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes a device with multiple layers and redistribution lines for improved connectivity and functionality.
- Passivation layer on a semiconductor substrate
- First redistribution line and second redistribution line on the passivation layer
- First dielectric layer covering the redistribution lines and passivation layer
- Under bump metallization with bump portion and first via portion for connection to the redistribution lines
Potential Applications
This technology could be applied in semiconductor devices, integrated circuits, and electronic components requiring high-density interconnects.
Problems Solved
This innovation addresses the challenge of increasing connectivity and functionality in compact electronic devices by providing a reliable and efficient method for interconnecting different layers and components.
Benefits
- Improved connectivity and signal transmission - Enhanced functionality in compact electronic devices - Reliable and efficient interconnection method
Potential Commercial Applications
"High-Density Interconnect Technology for Semiconductor Devices"
Possible Prior Art
There may be prior art related to high-density interconnect technologies in semiconductor devices, but specific examples are not provided in the patent application.
Unanswered Questions
How does this technology compare to existing methods for interconnecting semiconductor devices?
This article does not provide a direct comparison to existing methods for interconnecting semiconductor devices, leaving room for further analysis and evaluation of the technology's advantages and limitations.
What are the potential limitations or challenges in implementing this technology on a larger scale?
The article does not address potential limitations or challenges in scaling up the implementation of this technology, leaving room for further exploration of practical considerations and feasibility in mass production.
Original Abstract Submitted
in an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line, the second redistribution line, and the passivation layer; and an under bump metallization having a bump portion and a first via portion, the bump portion disposed on and extending along the first dielectric layer, the bump portion overlapping the first redistribution line and the second redistribution line, the first via portion extending through the first dielectric layer to be physically and electrically coupled to the first redistribution line.
