Taiwan semiconductor manufacturing co., ltd. (20240096803). DIAGONAL BACKSIDE POWER AND SIGNAL ROUTING FOR AN INTEGRATED CIRCUIT simplified abstract
Contents
- 1 DIAGONAL BACKSIDE POWER AND SIGNAL ROUTING FOR AN INTEGRATED CIRCUIT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DIAGONAL BACKSIDE POWER AND SIGNAL ROUTING FOR AN INTEGRATED CIRCUIT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
DIAGONAL BACKSIDE POWER AND SIGNAL ROUTING FOR AN INTEGRATED CIRCUIT
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Sheng-Hsiung Chen of Zhubei City (TW)
Jerry Chang Jui Kao of Taipei (TW)
DIAGONAL BACKSIDE POWER AND SIGNAL ROUTING FOR AN INTEGRATED CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096803 titled 'DIAGONAL BACKSIDE POWER AND SIGNAL ROUTING FOR AN INTEGRATED CIRCUIT
Simplified Explanation
The integrated circuit described in the patent application includes a device, a first interconnect structure above the device, and a second interconnect structure below the device. The first interconnect structure consists of multiple frontside metal layers, while the second interconnect structure consists of multiple backside metal layers with metal conductors routed diagonally. In some cases, there may be an additional backside metal layer with metal conductors routed using mixed-manhattan-diagonal routing. Various techniques are employed to route signals between the metal conductors in the backside interconnect structure and cells on the frontside metal layers.
- The integrated circuit includes a device, a first interconnect structure, and a second interconnect structure.
- The first interconnect structure has multiple frontside metal layers, while the second interconnect structure has multiple backside metal layers with diagonal routing.
- Additional backside metal layers may be included with mixed-manhattan-diagonal routing for metal conductors.
- Various techniques are used to route signals between metal conductors in the backside interconnect structure and cells on the frontside metal layers.
Potential Applications
The technology described in this patent application could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.
Problems Solved
This technology addresses the challenge of efficiently routing signals between different metal layers in an integrated circuit, improving overall performance and functionality.
Benefits
- Enhanced signal routing efficiency - Improved performance of integrated circuits - Increased functionality and versatility in electronic devices
Potential Commercial Applications
Optimizing signal routing in integrated circuits can lead to more efficient and advanced electronic devices, potentially benefiting industries such as telecommunications, consumer electronics, and automotive.
Possible Prior Art
One possible prior art could be the use of traditional routing techniques in integrated circuits, which may not be as efficient or effective as the diagonal and mixed-manhattan-diagonal routing methods described in this patent application.
Unanswered Questions
How does this technology impact the power consumption of integrated circuits?
The article does not provide information on how the described technology affects the power consumption of integrated circuits.
Are there any limitations or drawbacks to using diagonal and mixed-manhattan-diagonal routing in metal layers?
The article does not discuss any potential limitations or drawbacks of employing diagonal and mixed-manhattan-diagonal routing in metal layers of integrated circuits.
Original Abstract Submitted
an integrated circuit includes a device, a first interconnect structure disposed above the device and a second interconnect structure positioned below the device. the first interconnect structure includes multiple frontside metal layers. the second interconnect structure includes multiple backside metal layers, where each backside metal layer includes metal conductors routed according to diagonal routing. in some embodiments, a backside interconnect structure can include another backside metal layer that includes metal conductors routed according to mixed-manhattan-diagonal routing. a variety of techniques can be used to route signals between metal conductors in the backside interconnect structure and cells on one or more frontside metal layers.
