Taiwan semiconductor manufacturing co., ltd. (20240096789). MODIFIED FUSE STRUCTURE AND METHOD OF USE simplified abstract

MODIFIED FUSE STRUCTURE AND METHOD OF USE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Meng-Sheng Chang of Hsinchu (TW)

Chien-Ying Chen of Hsinchu (TW)

Yao-Jen Yang of Hsinchu (TW)

MODIFIED FUSE STRUCTURE AND METHOD OF USE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096789 titled 'MODIFIED FUSE STRUCTURE AND METHOD OF USE

Simplified Explanation

The abstract describes an antifuse structure and IC devices incorporating such antifuse structures, where the antifuse structure includes a dielectric antifuse structure formed on an active area with a first dielectric antifuse electrode, a second dielectric antifuse electrode, a first dielectric composition between them, and a first programming transistor connected to a first voltage supply. During programming, a programming voltage is applied to certain antifuse structures to create a resistive direct electrical connection between the electrodes.

• Dielectric antifuse structure formed on an active area
• First and second dielectric antifuse electrodes
• First dielectric composition between electrodes
• First programming transistor connected to a first voltage supply
• Programming operation selectively applies voltage to form resistive connection between electrodes

Potential Applications

The technology can be applied in:

• Non-volatile memory devices
• Programmable logic devices
• Integrated circuits requiring antifuse structures

Problems Solved

• Providing reliable and programmable antifuse structures
• Enabling direct electrical connections between electrodes
• Enhancing performance and functionality of IC devices

Benefits

• Improved reliability and durability
• Enhanced programming capabilities
• Increased efficiency in IC design and operation

Potential Commercial Applications

The technology can be utilized in:

• Semiconductor industry for memory and logic devices
• Electronics manufacturing for advanced ICs
• Research and development of innovative semiconductor technologies

Possible Prior Art

One possible prior art is the use of antifuse structures in programmable devices, but the specific configuration and composition described in this patent application may be novel and inventive.

How does this technology compare to traditional fuse-based structures in terms of reliability and performance?

The article does not provide a direct comparison between antifuse structures and traditional fuse-based structures in terms of reliability and performance.

What are the potential challenges in scaling up this technology for mass production in semiconductor manufacturing?

The article does not address the potential challenges in scaling up this technology for mass production in semiconductor manufacturing.

Original Abstract Submitted

an antifuse structure and ic devices incorporating such antifuse structures in which the antifuse structure includes an dielectric antifuse structure formed on an active area having a first dielectric antifuse electrode, a second dielectric antifuse electrode extending parallel to the first dielectric antifuse electrode, a first dielectric composition between the first dielectric antifuse electrode and the second dielectric antifuse electrode, and a first programming transistor electrically connected to a first voltage supply wherein, during a programming operation a programming voltage is selectively applied to certain of the dielectric antifuse structures to form a resistive direct electrical connection between the first dielectric antifuse electrode and the second dielectric antifuse electrode.