Taiwan semiconductor manufacturing co., ltd. (20240096787). SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS simplified abstract

SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Ming-Da Cheng of Taoyuan City (TW)

Wei-Hung Lin of Xinfeng Township (TW)

Hui-Min Huang of Taoyuan City (TW)

Chang-Jung Hsueh of Taipei City (TW)

Po-Hao Tsai of Taoyuan City (TW)

Yung-Sheng Lin of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096787 titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE BUMPS

Simplified Explanation

The semiconductor device structure described in the abstract includes a conductive pillar with a protruding portion, an interconnection structure, upper and lower conductive vias, and electrical connections between the components.

• The semiconductor device structure includes an interconnection structure over a semiconductor substrate.
• A conductive pillar is positioned over the interconnection structure, with a protruding portion extending towards the semiconductor substrate.
• An upper conductive via connects the conductive pillar to the interconnection structure.
• A lower conductive via is connected to the conductive pillar through the upper conductive via.
• The conductive pillar extends across the upper and lower conductive vias.
• The top view of the second conductive via is separated from the top view of the protruding portion.

Potential Applications

This semiconductor device structure could be used in various electronic devices, such as smartphones, tablets, and computers.

Problems Solved

This technology provides a more efficient and reliable way to connect different components in semiconductor devices.

Benefits

The structure allows for improved electrical connections and potentially better performance in electronic devices.

Potential Commercial Applications

This technology could be valuable for semiconductor manufacturers looking to enhance the performance of their products.

Possible Prior Art

There may be prior art related to semiconductor device structures with similar interconnection configurations, but specific examples are not provided in the abstract.

Unanswered Questions

How does the protruding portion of the conductive pillar impact the overall performance of the semiconductor device structure?

The abstract does not provide details on the specific effects of the protruding portion on the functionality of the device.

Are there any limitations or drawbacks to this semiconductor device structure that have not been mentioned in the abstract?

The abstract does not address any potential limitations or drawbacks of this technology, leaving room for further exploration and analysis.

Original Abstract Submitted

a semiconductor device structure is provided. the semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. the conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. the semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. the lower conductive via is electrically connected to the conductive pillar through the upper conductive via. the conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. a top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.