Taiwan semiconductor manufacturing co., ltd. (20240096760). SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chen-Hua Yu of Hsinchu City (TW)
Chun-Hui Yu of Hsinchu County (TW)
Kuo-Chung Yee of Taoyuan City (TW)
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096760 titled 'SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor package described in the abstract includes a chip with conductive posts, a redistribution structure with multiple layers, and first under-ball metallurgies patterns. The redistribution structure is placed on the active surface of the chip, connecting to the conductive posts through openings in the dielectric layers. The topmost metallization layer on the redistribution structure contains contact pads and routing traces, with the second dielectric layer covering it and exposing the contact pads through openings. The first under-ball metallurgies patterns are positioned on the contact pads, extending to contact the sidewalls and top surfaces.
- Chip with conductive posts exposed at an active surface
- Redistribution structure with multiple layers connecting to the chip's conductive posts
- Topmost metallization layer with contact pads and routing traces
- Second dielectric layer exposing contact pads through openings
- First under-ball metallurgies patterns on contact pads contacting sidewalls and top surfaces
Potential Applications
The technology described in the patent application could be used in various semiconductor packaging applications, such as in microprocessors, memory chips, and integrated circuits.
Problems Solved
This technology helps improve the electrical connections and signal transmission within semiconductor packages, enhancing overall performance and reliability.
Benefits
The benefits of this technology include increased efficiency, improved signal integrity, and enhanced durability of semiconductor packages.
Potential Commercial Applications
This technology could be applied in the manufacturing of advanced electronic devices, leading to more reliable and high-performance products.
Possible Prior Art
One possible prior art for this technology could be the use of similar redistribution structures and metallization layers in semiconductor packaging processes.
Unanswered Questions
How does this technology compare to existing semiconductor packaging methods?
The article does not provide a direct comparison to existing semiconductor packaging methods, leaving room for further analysis on the advantages and disadvantages of this technology.
What are the specific performance improvements achieved with this technology?
The article does not detail the specific performance improvements achieved with this technology, leaving room for further research on the quantitative benefits of implementing this innovation.
Original Abstract Submitted
a semiconductor package includes a chip, a redistribution structure, and first under- ball metallurgies patterns. the chip includes conductive posts exposed at an active surface. the redistribution structure is disposed on the active surface. the redistribution structure includes a first dielectric layer, a topmost metallization layer, and a second dielectric layer. the first dielectric layer includes first openings exposing the conductive posts of the chip. the topmost metallization layer is disposed over the first dielectric layer and is electrically connected to the conductive posts. the topmost metallization layer comprises first contact pads and routing traces connected to the first contact pads. the second dielectric layer is disposed on the topmost metallization layer and includes second openings exposing the first contact pads. the first under-ball metallurgies patterns are disposed on the first contact pads, extending on and contacting sidewalls and top surfaces of the first contact pads.
