Taiwan semiconductor manufacturing co., ltd. (20240096701). DEVICE WITH THROUGH VIA AND RELATED METHODS simplified abstract
Contents
- 1 DEVICE WITH THROUGH VIA AND RELATED METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DEVICE WITH THROUGH VIA AND RELATED METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
DEVICE WITH THROUGH VIA AND RELATED METHODS
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chun-Yuan Chen of Hsinchu (TW)
Ching-Wei Tsai of Hsinchu (TW)
Shang-Wen Chang of Hsinchu (TW)
DEVICE WITH THROUGH VIA AND RELATED METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096701 titled 'DEVICE WITH THROUGH VIA AND RELATED METHODS
Simplified Explanation
The patent application describes a device with a stack of semiconductor nanostructures, a gate structure, a source/drain region, a contact structure, a backside conductive trace, a first through via, and a gate isolation structure.
- The device includes a stack of semiconductor nanostructures.
- The gate structure wraps around the semiconductor nanostructures and extends in a first direction.
- The source/drain region abuts the gate structure and the stack in a second direction transverse to the first direction.
- A contact structure is located on the source/drain region.
- A backside conductive trace is positioned under the stack, extending in the second direction.
- A first through via extends vertically from the contact structure to the top surface of the backside dielectric layer.
- A gate isolation structure abuts the first through via in the second direction.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- Nanotechnology research
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving integration of components
Benefits
The benefits of this technology include:
- Increased efficiency
- Enhanced functionality
Potential Commercial Applications
This technology could be used in:
- Electronics industry
- Semiconductor manufacturing
Possible Prior Art
Prior art related to this technology includes:
- Semiconductor device structures with similar configurations
- Previous patents on nanostructure integration
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices to evaluate performance and efficiency.
What specific industries or research fields could benefit the most from this technology?
The article does not specify which industries or research fields could benefit the most from the application of this technology.
Original Abstract Submitted
a device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.
