Taiwan semiconductor manufacturing co., ltd. (20240096697). CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE simplified abstract

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CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Joanna Chaw Yane Yin of Hsinchu (TW)

Hua Feng Chen of Hsinchu City (TW)

CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096697 titled 'CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes devices and methods for configuring a profile of a liner layer before filling an opening over a semiconductor substrate. The liner layer has varying thicknesses at the bottom and top of the opening, with the top thickness being smaller than the bottom thickness. The filled opening results in a contact structure.

  • Explanation of the patent/innovation:

- Configuring a liner layer profile before filling an opening over a semiconductor substrate - Varying thicknesses of the liner layer at the bottom and top of the opening - Top thickness of the liner layer is smaller than the bottom thickness - Filled opening results in a contact structure

Potential Applications

The technology can be applied in semiconductor manufacturing processes, specifically in creating contact structures for electronic devices.

Problems Solved

1. Ensures proper configuration of the liner layer before filling the opening, improving the overall quality of the contact structure. 2. Helps in optimizing the performance and reliability of electronic devices by providing a well-designed contact structure.

Benefits

1. Enhanced performance and reliability of electronic devices. 2. Improved manufacturing processes for semiconductor devices. 3. Increased efficiency in creating contact structures.

Potential Commercial Applications

Optimizing Liner Layer Profiles for Semiconductor Contact Structures

Possible Prior Art

There may be prior art related to methods of configuring liner layers in semiconductor manufacturing processes, but specific examples are not provided in the abstract.

Unanswered Questions

== How does this technology compare to existing methods of configuring liner layers in semiconductor manufacturing? The article does not provide a direct comparison to existing methods, leaving the reader to wonder about the specific advantages or differences this technology may have.

== What are the specific materials or processes involved in configuring the liner layer profile? The abstract does not delve into the details of the materials or processes used in configuring the liner layer profile, leaving room for further exploration into the technical aspects of the innovation.


Original Abstract Submitted

devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. the liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. in an embodiment, the filled opening provides a contact structure.