Taiwan semiconductor manufacturing co., ltd. (20240096696). STRUCTURES WITH CONVEX CAVITY BOTTOMS simplified abstract
Contents
- 1 STRUCTURES WITH CONVEX CAVITY BOTTOMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STRUCTURES WITH CONVEX CAVITY BOTTOMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
STRUCTURES WITH CONVEX CAVITY BOTTOMS
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Wei Hsiang Chan of Hsinchu (TW)
STRUCTURES WITH CONVEX CAVITY BOTTOMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096696 titled 'STRUCTURES WITH CONVEX CAVITY BOTTOMS
Simplified Explanation
The patent application describes a method for fabricating conductive structures located within dielectric material.
- The method involves providing a substrate with a conductive feature in a first dielectric layer.
- A second dielectric layer is deposited over the conductive feature and the first dielectric layer.
- The second dielectric layer is etched to form a cavity with a convex profile at the bottom.
- A barrier layer is deposited along the bottom of the cavity.
- A conductive material is deposited in the cavity to form a structure electrically connected to the conductive feature.
Potential Applications
The technology described in the patent application could be applied in the manufacturing of electronic devices, sensors, and integrated circuits.
Problems Solved
This technology solves the problem of integrating conductive structures within dielectric material efficiently and effectively.
Benefits
The benefits of this technology include improved electrical connectivity, reduced signal interference, and enhanced device performance.
Potential Commercial Applications
The technology could be commercially applied in the semiconductor industry for the production of advanced electronic components.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods for fabricating conductive structures within dielectric material in the field of microelectronics.
What are the specific materials used in the fabrication process described in the patent application?
The specific materials used in the fabrication process include a substrate, conductive feature, first dielectric layer, second dielectric layer, barrier layer, and conductive material.
How does the convex profile at the bottom of the cavity contribute to the functionality of the conductive structure?
The convex profile at the bottom of the cavity helps to ensure proper deposition and adhesion of the conductive material, leading to a more reliable and stable conductive structure.
Original Abstract Submitted
provided are conductive structures located within dielectric material, and methods for fabricating such structures and devices. an exemplary method includes providing a substrate having a conductive feature in a first dielectric layer; depositing a second dielectric layer over the conductive feature and the first dielectric layer; etching the second dielectric layer to form a cavity through the second dielectric layer, wherein the cavity has a bottom with a convex profile; depositing a barrier layer along the bottom of the cavity; and depositing a conductive material in the cavity to form a structure electrically connected to the conductive feature.
