Taiwan semiconductor manufacturing co., ltd. (20240096647). HETEROGENEOUS BONDING STRUCTURE AND METHOD FORMING SAME simplified abstract

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HETEROGENEOUS BONDING STRUCTURE AND METHOD FORMING SAME

Organization Name

taiwan semiconductor manufacturing co., ltd.

Inventor(s)

Mirng-Ji Lii of Sinpu Township (TW)

Chen-Shien Chen of Zhubei City (TW)

Lung-Kai Mao of Kaohsiung City (TW)

Ming-Da Cheng of Taoyuan City (TW)

Wen-Hsiung Lu of Tainan City (TW)

HETEROGENEOUS BONDING STRUCTURE AND METHOD FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096647 titled 'HETEROGENEOUS BONDING STRUCTURE AND METHOD FORMING SAME

Simplified Explanation

The method described in the abstract involves the formation of a package component by creating openings in a dielectric layer, depositing metallic materials, planarizing the materials, and selectively depositing a second metallic material to form bond pads.

  • Formation of a first package component
  • Creating a first plurality of openings in a dielectric layer
  • Depositing a first metallic material into the openings
  • Performing a planarization process to form metal pads
  • Selectively depositing a second metallic material on the metal pads to form bond pads

Potential Applications

This technology could be applied in the semiconductor industry for manufacturing electronic components such as integrated circuits and microchips.

Problems Solved

This technology solves the problem of efficiently creating bond pads for connecting different package components in electronic devices.

Benefits

The benefits of this technology include improved connectivity, increased reliability, and enhanced performance of electronic devices.

Potential Commercial Applications

One potential commercial application of this technology is in the production of advanced electronic devices for various industries such as telecommunications, automotive, and consumer electronics.

Possible Prior Art

One possible prior art for this technology could be methods for creating bond pads in semiconductor devices using different materials and processes.

Unanswered Questions

How does this technology compare to existing methods for creating bond pads in electronic components?

This article does not provide a direct comparison between this technology and existing methods for creating bond pads.

What are the specific materials used in the deposition process for forming the bond pads?

The article does not specify the exact materials used in the deposition process for forming the bond pads.


Original Abstract Submitted

a method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. the first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. the first package component is bonded to a second package component.