Taiwan semiconductor manufacturing co., ltd. (20240096623). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Chieh-Hsin Hsieh of Hsinchu County (TW)
Wei-Han Lai of New Taipei City (TW)
Ching-Yu Chang of Yuansun Village (TW)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096623 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves manufacturing a semiconductor device by layering different materials over a substrate and patterning a photosensitive layer on top.
- Formation of a first layer comprising an organic material over a substrate
- Formation of a second layer containing a silicon-containing material and additives like a photoacid generator, an actinic radiation absorbing additive with iodine substituents, or a silicon-containing monomer with iodine or phenol group substituents
- Patterning a photosensitive layer over the second layer
Potential Applications
This technology could be applied in the manufacturing of various semiconductor devices, such as integrated circuits, sensors, and memory devices.
Problems Solved
This method helps in achieving precise patterning of semiconductor devices, which is crucial for their functionality and performance.
Benefits
The use of organic and silicon-containing materials along with additives enhances the efficiency and accuracy of the manufacturing process, leading to improved semiconductor device performance.
Potential Commercial Applications
This technology could be utilized by semiconductor manufacturers looking to enhance the quality and precision of their products, ultimately leading to better market competitiveness.
Possible Prior Art
Prior art in the field of semiconductor device manufacturing may include methods involving similar layering techniques and patterning processes using different materials and additives.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing processes?
This article does not provide a direct comparison between this method and traditional semiconductor manufacturing processes.
What are the specific performance improvements seen with the use of the described materials and additives?
The article does not delve into the specific performance improvements achieved by using the organic and silicon-containing materials along with the additives mentioned in the method.
Original Abstract Submitted
a method of manufacturing a semiconductor device includes forming a first layer comprising an organic material over a substrate. a second layer is formed over the first layer, wherein the second layer includes a silicon-containing material and one or more selected from the group consisting of a photoacid generator, an actinic radiation absorbing additive including an iodine substituent, and a silicon-containing monomer having iodine or phenol group substituents. a photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.
